The FDMS86252L is an N-Channel Shielded Gate PowerTrench¬Æ MOSFET designed for high-efficiency applications. It features a maximum drain-source voltage of 150 V and a continuous drain current rating of 12 A. The device exhibits a low on-resistance of 56 mOc at a gate-source voltage of 10 V and a drain current of 4.4 A, making it suitable for applications requiring efficient power management. The MOSFET is optimized for soft recovery with an advanced body diode technology, enhancing its performance in synchronous rectification and DC-DC conversion applications. It is packaged in an 8-PQFN (5x6) surface mount configuration, with a moisture sensitivity level of MSL1, indicating robust handling characteristics. The operating temperature range is from -55¬8C to +150¬8C, allowing for versatility in various environments. The product is RoHS compliant and comes in a reel of 3000 units, making it suitable for high-volume production.
MOSFETs 150V N-Channel Shielded Gate PowerTrench MOSFET Product overview: FDMS86252L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 150V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS86252L can be used for catalog matching and distributor lookup.
N-Channel 150V 4.4A (Ta) 2.5W (Ta), 50W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 150V 4.4A (Ta) 2.5W (Ta), 50W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 150V 4.4A (Ta) 2.5W (Ta), 50W (Tc) Surface Mount 8-PQFN (5x6)
MOSFET N-Ch 150V 12A Shielded Gate PQFN8
MOSFET N-Ch 150V 12A Shielded Gate PQFN8
MOSFET N-Ch 150V 12A Shielded Gate PQFN8
Manufacturer: ON Semiconductor
Win Source Part Number: 919047-FDMS86252L
Series: PowerTrench®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 150 V 4.4A (Ta) 2.5W (Ta), 50W (Tc) Surface Mount 8-PQFN (5x6)
Package: 8-PowerTDFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: FDMS86252
Categories: Discrete Semiconductor Products
Case / Package: 8-PQFN (5x6)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 23 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: FDMS86252LCT, FDMS86252LTR, FDMS86252LDKR
MOSFET, N-CH, 150V, 12A, POWER 56-8; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:12A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V; Power Dissipation:50W; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET N-CH 150V 4.4A 8PQFN
MOSFET FET 150V 56.0 MOHM PQFN56
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FDMS86252L | FDMS86252LDKR-ND | 8648461P | 8648461 | 919047-FDMS86252L | 46AC0798 | FDMS86252L | FDMS86252L |
| Product Name | N-Channel 150V MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86252L | Mosfet, N-Ch, 150V, 12A, Power 56-8; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| Transconductance | 0.0210 kS | |||||||
| PD | 2.5 milliwatts | 50000 milliwatts | ||||||
| Package Type | Reel | 8-PowerTDFN | WDFN | Power 56 | SOT3; 8-PQFN (5x6) | TO-3 | 8-PowerTDFN |
