MOSFET N-CH 150V 6.7A/20A 8PQFN
N-Channel 150V 6.7A (Ta), 20A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 150V 6.7A (Ta), 20A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 150V 6.7A (Ta), 20A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)
MOSFETs 150V N-Channel PowerTrench MOSFET Product overview: FDMS86250 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 150V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS86250 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1173847-FDMS86250
Series: PowerTrench
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerTDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 20A (Tc)
Family Name: FDMS86250
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: 8-PQFN (5x6), Power56
Channel Type Type: N
Drain Source Voltage: 150V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2330pF @ 75V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2.5W (Ta), 96W (Tc)
Rds On (Maximum) @ Id, Vgs: 25 mOhm @ 6.7A, 10V
Alternative Parts (Cross-Reference): IRFH5015TR2PBF; IRFH5015PbF; IRFH5015TRPBF;
Introduction Date: December 13, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFET, N-CH, 150V, 30A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.9V; Power DissipationRoHS Compliant: Yes
MOSFET FET 150V 25.0 MOHM PQFN56
MOSFET N-CH 150V 6.7A/20A 8PQFN
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDMS86250 | FDMS86250TR-ND | 2088-FDMS86250 | 1173847-FDMS86250 | 07AH3929 | FDMS86250 | FDMS86250 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 150V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86250 | Mosfet, N-Ch, 150V, 30A, Pqfn; Transistor Polarity Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 150 volts | ||||||
| IDSS | 6700 milliamps | 30000 milliamps | |||||
| PD | 2500 milliwatts | 96 milliwatts | 2500 to 96000 milliwatts |
