N-Channel 100V 4.8A (Ta), 16.5A (Tc) 2.5W (Ta), 31W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 100V 4.8A (Ta), 16.5A (Tc) 2.5W (Ta), 31W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 100V 4.8A (Ta), 16.5A (Tc) 2.5W (Ta), 31W (Tc) Surface Mount 8-PQFN (5x6)
MOSFET N-CH 100V 4.8A/16.5A 8QFN
MOSFETs 100V N-Channel PowerTrench MOSFET Product overview: FDMS8622 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS8622 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038263-FDMS8622
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 31W (Tc)
Family Name: FDMS8622
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 4.8A (Ta), 16.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 400pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 56 mOhm @ 4.8A, 10V
Alternative Parts (Cross-Reference): STL8N10LF3; STL30N10F7; GKI10526;
Introduction Date: July 01, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET N-CH 100V 4.8A/16.5A 8QFN
MOSFET, N-CH, 100V, 16.5A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:16.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET 100V N-Channel PowerTrench MOSFET
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMS8622TR-ND | FDMS8622 | 2088-FDMS8622 | 1038263-FDMS8622 | FDMS8622 | 07AH3928 | FDMS8622 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 100V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8622 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 16.5A, Pqfn; Transistor Polarity Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | 8-PowerTDFN | 8-PowerTDFN | Reel | SOT3; 8-PQFN (5x6), Power56 | 8-PowerTDFN | TO-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| IDSS | 4800 milliamps | 16500 milliamps |
