onsemi Single FETs, MOSFETs FDMS8622

Description
N-Channel 100V 4.8A (Ta), 16.5A (Tc) 2.5W (Ta), 31W (Tc) Surface Mount 8-PQFN (5x6)
Request a Quote Datasheet
Description
N-Channel 100V 4.8A (Ta), 16.5A (Tc) 2.5W (Ta), 31W (Tc) Surface Mount 8-PQFN (5x6)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDMS8622TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS8622TR-ND
Single FETs, MOSFETs FDMS8622TR-ND
N-Channel 100V 4.8A (Ta), 16.5A (Tc) 2.5W (Ta), 31W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 100V 4.8A (Ta), 16.5A (Tc) 2.5W (Ta), 31W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS8622CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS8622CT-ND
Single FETs, MOSFETs FDMS8622CT-ND
N-Channel 100V 4.8A (Ta), 16.5A (Tc) 2.5W (Ta), 31W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 100V 4.8A (Ta), 16.5A (Tc) 2.5W (Ta), 31W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS8622DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS8622DKR-ND
Single FETs, MOSFETs FDMS8622DKR-ND
N-Channel 100V 4.8A (Ta), 16.5A (Tc) 2.5W (Ta), 31W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 100V 4.8A (Ta), 16.5A (Tc) 2.5W (Ta), 31W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS8622 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMS8622
Single FETs, MOSFETs FDMS8622
MOSFET N-CH 100V 4.8A/16.5A 8QFN

MOSFET N-CH 100V 4.8A/16.5A 8QFN

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8622 - 1038263-FDMS8622 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8622
1038263-FDMS8622
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8622 1038263-FDMS8622
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038263-FDMS8622 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 31W (Tc) Family Name: FDMS8622 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 4.8A (Ta), 16.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 7nC @ 10V Max Input Capacitance: 400pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 56 mOhm @ 4.8A, 10V Alternative Parts (Cross-Reference): STL8N10LF3; STL30N10F7; GKI10526; Introduction Date: July 01, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038263-FDMS8622
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 31W (Tc)
Family Name: FDMS8622
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 4.8A (Ta), 16.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 400pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 56 mOhm @ 4.8A, 10V
Alternative Parts (Cross-Reference): STL8N10LF3; STL30N10F7; GKI10526;
Introduction Date: July 01, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FDMS8622
MOSFET FDMS8622
MOSFET 100V N-Channel PowerTrench MOSFET

MOSFET 100V N-Channel PowerTrench MOSFET

Buy Now Datasheet
Mosfet, N-Ch, 100V, 16.5A, Pqfn; Transistor Polarity Onsemi - 07AH3928 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 16.5A, Pqfn; Transistor Polarity Onsemi
07AH3928
Mosfet, N-Ch, 100V, 16.5A, Pqfn; Transistor Polarity Onsemi 07AH3928
MOSFET, N-CH, 100V, 16.5A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:16.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 100V, 16.5A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:16.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS8622 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS8622
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS8622
MOSFET N-CH 100V 4.8A/16.5A 8QFN

MOSFET N-CH 100V 4.8A/16.5A 8QFN

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDMS8622TR-ND FDMS8622 1038263-FDMS8622 FDMS8622 07AH3928 FDMS8622
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8622 MOSFET Mosfet, N-Ch, 100V, 16.5A, Pqfn; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type 8-PowerTDFN 8-PowerTDFN SOT3; 8-PQFN (5x6), Power56 TO-3 8-PowerTDFN
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts 100 volts
IDSS 4800 milliamps 16500 milliamps
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