Win Source Part Number: 1018798-FDMS86202ET1
Category: Discrete Semiconductor Products>Transistors
Series: PowerTrench®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (5x6)
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: FDMS86202ET120TR,FDM
Base Product Number: FDMS86202
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
N-Channel 120V 13.5A (Ta), 102A (Tc) 3.3W (Ta), 187W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 120V 13.5A (Ta), 102A (Tc) 3.3W (Ta), 187W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 120V 13.5A (Ta), 102A (Tc) 3.3W (Ta), 187W (Tc) Surface Mount 8-PQFN (5x6)
MOSFETs 120V N-Channel Shielded Gate PowerTrench MOSFET Product overview: FDMS86202ET120 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 120V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS86202ET120 can be used for catalog matching and distributor lookup.
MOSFET N-CH 120V 13.5/102A PWR56
MOSFET FET 120V 7.2 MOHM PQFN56
MOSFET, N-CH, 120V, 102A, 175DEG C, 187W ROHS COMPLIANT: YES
MOSFET N-CH 120V 13.5/102A PWR56
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1018798-FDMS86202ET120 | FDMS86202ET120TR-ND | 2088-FDMS86202ET120 | FDMS86202ET120 | FDMS86202ET120 | 54AH8642 | FDMS86202ET120 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | N-Channel 120V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 120V, 102A, 175Deg C, 187W Rohs Compliant Onsemi | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 3300 to 187000 milliwatts | 187 milliwatts | 3300 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | SOT3 | 8-PowerTDFN | Reel | 8-PowerTDFN | TO-3 | 8-PowerTDFN | |
| MOSFET Operating Mode | Enhancement |
