MOSFET N-CH 120V 13.5A POWER56
N-Channel 120V 13.5A (Ta) 2.7W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 120V 13.5A (Ta) 2.7W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 120V 13.5A (Ta) 2.7W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)
Manufacturer: ON Semiconductor
Win Source Part Number: 871666-FDMS86202
Series: PowerTrench®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 120 V 13.5A (Ta) 2.7W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)
Package: 8-PowerTDFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: FDMS86
Categories: Discrete Semiconductor Products
Case / Package: 8-PQFN (5x6)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 40 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: FDMS86202DKR, FDMS86202CT, FDMS86202TR
MOSFET, N-CH, 120V, 64A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:120V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 120V 13.5A POWER56
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDMS86202 | FDMS86202CT-ND | 871666-FDMS86202 | 07AH3927 | FDMS86202 | FDMS86202 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86202 | Mosfet, N-Ch, 120V, 64A, Pqfn; Transistor Polarity Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 120 volts | |||||
| IDSS | 13500 milliamps | 64000 milliamps | ||||
| PD | 2700 milliwatts |
