POWER FIELD-EFFECT TRANSISTOR, 1
N-Channel 120V 11.6A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 120V 11.6A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 120V 11.6A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040262-FDMS86201
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 120V
Continuous Drain Current at 25°C: 11.6A (Ta), 35A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 2735pF @ 60V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.5 mOhm @ 11.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFETs 120V N-Channel PowerTrench MOSFET Product overview: FDMS86201 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 120V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS86201 can be used for catalog matching and distributor lookup.
MOSFET 120V N-Channel PowerTrench MOSFET
MOSFET, N CH, 120V, 35A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:120V; On Resistance Rds(on):0.0096ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.6V RoHS Compliant: Yes
MOSFET N-CH 120V 11.6A/49A 8PQFN
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDMS86201 | FDMS86201DKR-ND | 040262-FDMS86201 | 2088-FDMS86201 | FDMS86201 | 88T3342 | FDMS86201 |
| Product Name | Specialized ICs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86201 | N-Channel 120V MOSFET Transistor | MOSFET | Mosfet, N Ch, 120V, 35A, Power56; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 120 volts | 120 volts | |||||
| IDSS | 11600 milliamps | 35000 milliamps | |||||
| PD | 2500 milliwatts | 2500 to 104000 milliwatts | 104 milliwatts |