onsemi Single FETs, MOSFETs FDMS86200

MOSFET N-CH 150V 9.6A/35A 8PQFN

MOSFET N-Channel 150V 9.6A Power 56

MOSFET N-Channel 150V 9.6A Power 56

MOSFET N-Channel 150V 9.6A Power 56

N-Channel 150V 9.6A (Ta), 35A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 150V 9.6A (Ta), 35A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 150V 9.6A (Ta), 35A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066999-FDMS86200
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Family Name: FDMS86200
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 9.6A (Ta), 35A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 2715pF @ 75V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 9.6A, 10V
Alternative Parts (Cross-Reference): SiR872ADP-T1-GE3; SiR872DP-T1-GE3; BSC190N15NS3 G;
Introduction Date: June 08, 2010
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial
Quantity per package: 3k pcs