MOSFETs PTNG 100/20V Nch Power Trench MOSFET Product overview: FDMS86182 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS86182 can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 78A 8PQFN
N-Channel 100V 78A (Tc) 83W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 100V 78A (Tc) 83W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 100V 78A (Tc) 83W (Tc) Surface Mount 8-PQFN (5x6)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 774479-FDMS86182
Series: PowerTrench
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerTDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Family Name: FDMS86182
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Package: 8-PQFN (5x6), Power56
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4V @ 150μA
Gate Charge (Qg) (Maximum) @ Vgs: 24nC @ 6V
Input Capacitance (Ciss) (Maximum) @ Vds: 2635pF @ 50V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 83W (Tc)
Rds On (Maximum) @ Id, Vgs: 7.2 mOhm @ 28A, 10V
Alternative Parts (Cross-Reference): SiR804DP-T1-GE3; STL92N10F7AG; STL100N10F7; SiR804DP;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFET N-CH 100V 78A 8PQFN
MOSFET, N-CH, 100V, 78A, POWER 56; Transistor Polarity:N Channel; Continuous Drain Current Id:78A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power RoHS Compliant: Yes
MOSFET PTNG 100/20V Nch Power Trench MOSFET
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FDMS86182 | FDMS86182 | FDMS86182DKR-ND | 774479-FDMS86182 | FDMS86182 | 18AC7315 | FDMS86182 |
| Product Name | 20V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86182 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 78A, Power 56; Transistor Polarity Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.0630 kS | ||||||
| PD | 83 milliwatts | 83000 milliwatts | 83000 milliwatts | ||||
| Package Type | Reel | 8-PowerTDFN | 8-PowerTDFN | SOT3 | 8-PowerTDFN | TO-3 |
