onsemi FETs - Single - FDMS86181 FDMS86181

Description
Manufacturer: ON Semiconductor Win Source Part Number: 805473-FDMS86181 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100V Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-PowerTDFN Power Dissipation (Maximum): 2.5W , 125W (Tc) Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 4.2mOhm at 44A, 10V Gate Charge (Qg) (Maximum) at Vgs: 59nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 4125pF at 50V Current - Continuous Drain (Id) at 25°C: 44A , 124A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Maximum Vgs: ±20V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 805473-FDMS86181 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100V Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-PowerTDFN Power Dissipation (Maximum): 2.5W , 125W (Tc) Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 4.2mOhm at 44A, 10V Gate Charge (Qg) (Maximum) at Vgs: 59nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 4125pF at 50V Current - Continuous Drain (Id) at 25°C: 44A , 124A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Maximum Vgs: ±20V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - FDMS86181 - 805473-FDMS86181 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FDMS86181
805473-FDMS86181
FETs - Single - FDMS86181 805473-FDMS86181
Manufacturer: ON Semiconductor Win Source Part Number: 805473-FDMS86181 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100V Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-PowerTDFN Power Dissipation (Maximum): 2.5W , 125W (Tc) Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 4.2mOhm at 44A, 10V Gate Charge (Qg) (Maximum) at Vgs: 59nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 4125pF at 50V Current - Continuous Drain (Id) at 25°C: 44A , 124A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Maximum Vgs: ±20V

Manufacturer: ON Semiconductor
Win Source Part Number: 805473-FDMS86181
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerTDFN
Power Dissipation (Maximum): 2.5W , 125W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 4.2mOhm at 44A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 59nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 4125pF at 50V
Current - Continuous Drain (Id) at 25°C: 44A , 124A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±20V

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Single FETs, MOSFETs - FDMS86181 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMS86181
Single FETs, MOSFETs FDMS86181
MOSFET N-CH 100V 44A/124A 8PQFN

MOSFET N-CH 100V 44A/124A 8PQFN

Supplier's Site Datasheet
Singapore
100V 20V MOSFET Transistor
2088-FDMS86181
100V 20V MOSFET Transistor 2088-FDMS86181
MOSFETs 100V/20V N-Chnl Power Trench MOSFET Product overview: FDMS86181 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 20V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS86181 can be used for catalog matching and distributor lookup.

MOSFETs 100V/20V N-Chnl Power Trench MOSFET Product overview: FDMS86181 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 20V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS86181 can be used for catalog matching and distributor lookup.

Supplier's Site
MOSFETs - 1811895 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1811895
MOSFETs 1811895
FET 100V 4.2 MOHM PQFN56

FET 100V 4.2 MOHM PQFN56

Supplier's Site
MOSFETs - 1811895P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1811895P
MOSFETs 1811895P
FET 100V 4.2 MOHM PQFN56

FET 100V 4.2 MOHM PQFN56

Supplier's Site
MOSFETs - 1811857 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1811857
MOSFETs 1811857
FET 100V 4.2 MOHM PQFN56

FET 100V 4.2 MOHM PQFN56

Supplier's Site
Single FETs, MOSFETs - FDMS86181TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS86181TR-ND
Single FETs, MOSFETs FDMS86181TR-ND
N-Channel 100V 44A (Ta), 124A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 100V 44A (Ta), 124A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS86181DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS86181DKR-ND
Single FETs, MOSFETs FDMS86181DKR-ND
N-Channel 100V 44A (Ta), 124A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 100V 44A (Ta), 124A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS86181CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS86181CT-ND
Single FETs, MOSFETs FDMS86181CT-ND
N-Channel 100V 44A (Ta), 124A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 100V 44A (Ta), 124A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Mosfet, N-Ch, 100V, 124A, Power56-8; Transistor Polarity Onsemi - 34AC1483 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 124A, Power56-8; Transistor Polarity Onsemi
34AC1483
Mosfet, N-Ch, 100V, 124A, Power56-8; Transistor Polarity Onsemi 34AC1483
MOSFET, N-CH, 100V, 124A, POWER56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:124A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power RoHS Compliant: Yes

MOSFET, N-CH, 100V, 124A, POWER56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:124A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS86181 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS86181
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS86181
MOSFET N-CH 100V 44A/124A 8PQFN

MOSFET N-CH 100V 44A/124A 8PQFN

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V/20V N-Chnl Power Trench MOSFET

MOSFET 100V/20V N-Chnl Power Trench MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 805473-FDMS86181 FDMS86181 2088-FDMS86181 1811895 1811895P FDMS86181TR-ND 34AC1483 FDMS86181 FDMS86181
Product Name FETs - Single - FDMS86181 Single FETs, MOSFETs 100V 20V MOSFET Transistor MOSFETs MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 100V, 124A, Power56-8; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
PD 2500 to 125000 milliwatts 2500 milliwatts 125 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 8-PowerTDFN Reel Pqfn PQFN 8-PowerTDFN TO-3 8-PowerTDFN
Packing Method Tape Reel; Reel Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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