MOSFET N-CH 100V 44A/124A 8PQFN
MOSFETs 100V/20V N-Chnl Power Trench MOSFET Product overview: FDMS86181 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 20V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS86181 can be used for catalog matching and distributor lookup.
N-Channel 100V 44A (Ta), 124A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 100V 44A (Ta), 124A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 100V 44A (Ta), 124A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount 8-PQFN (5x6)
Manufacturer: ON Semiconductor
Win Source Part Number: 805473-FDMS86181
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerTDFN
Power Dissipation (Maximum): 2.5W , 125W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 4.2mOhm at 44A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 59nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 4125pF at 50V
Current - Continuous Drain (Id) at 25°C: 44A , 124A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±20V
MOSFET, N-CH, 100V, 124A, POWER56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:124A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power RoHS Compliant: Yes
MOSFET 100V/20V N-Chnl Power Trench MOSFET
MOSFET N-CH 100V 44A/124A 8PQFN
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDMS86181 | 1811895 | 1811895P | 2088-FDMS86181 | FDMS86181TR-ND | 805473-FDMS86181 | 34AC1483 | FDMS86181 | FDMS86181 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | 100V 20V MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - FDMS86181 | Mosfet, N-Ch, 100V, 124A, Power56-8; Transistor Polarity Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 100 volts | ||||||||
| IDSS | 44000 milliamps | 124000 milliamps | |||||||
| PD | 2500 milliwatts | 125 milliwatts | 2500 to 125000 milliwatts |
