MOSFET N-CH 100V 13A/60A 8PQFN
MOSFETs 100V N-Channel PowerTrench MOSFET Product overview: FDMS86101A from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS86101A can be used for catalog matching and distributor lookup.
N-Channel 100V 13A (Ta), 60A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 100V 13A (Ta), 60A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 100V 13A (Ta), 60A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
MOSFET 100V N-Channel PowerTrench MOSFET
MOSFET N-CH 100V 13A/60A 8PQFN
MOSFET 100V N-Channel PowerTrench MOSFET
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMS86101A | 2088-FDMS86101A | FDMS86101ATR-ND | FDMS86101A | FDMS86101A | 598-FDMS86101A |
| Product Name | Single FETs, MOSFETs | N-Channel 100V MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 100V N-Channel PowerTrench MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||
| V(BR)DSS | 100 volts | 100 volts | ||||
| IDSS | 13000 milliamps | |||||
| PD | 2500 milliwatts | 104 milliwatts | 104000 milliwatts |
