N-Channel 100V 12.4A (Ta), 60A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 100V 12.4A (Ta), 60A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 100V 12.4A (Ta), 60A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
Manufacturer: ON Semiconductor
Win Source Part Number: 1173845-FDMS86101
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: FDMS86101
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: 8-PowerTDFN
Power Dissipation (Maximum): 2.5W, 104W
Alternative Parts (Cross-Reference): STL90N10F7; STL92N10F7AG; STL80N10WF7;
Introduction Date: January 19, 2009
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 12.4A, 60A
Rds On (Maximum) at Id, Vgs: 8mOhm at 13A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 55nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3000pF at 50V
MOSFET N-CH 100V 12.4A/60A 8PQFN
MOSFET N-Channel 100V 12.4A Power 56
MOSFET N-Channel 100V 12.4A Power 56
MOSFET N-Channel 100V 12.4A Power 56
MOSFET,N CH,100V,12.4A,POWER5
MOSFET, N CHANNEL, 100V, 60A, POWER 56-8; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.9V RoHS Compliant: Yes
MOSFET Transistor; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.9V; Power Dissipation:104W RoHS Compliant: Yes
MOSFET N-CH 100V 12.4A/60A 8PQFN
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDMS86101DKR-ND | 1173845-FDMS86101 | FDMS86101 | 7394848 | 7394848P | 55T6326 | 29X6691 | 29R0794 | FDMS86101 | FDMS86101 |
| Product Name | Single FETs, MOSFETs | Electronic Surplus - FDMS86101 | Single FETs, MOSFETs | MOSFETs | MOSFETs | Mosfet,n Ch,100V,12.4A,power56; Transistor Polarity Onsemi | Mosfet, N Channel, 100V, 60A, Power 56-8; Channel Type Onsemi | Mosfet Transistor; Channel Type Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Package Type | 8-PowerTDFN | SOT3 | 8-PowerTDFN | PQFN8 | Power 56 | TO-3 | TO-3 | TO-3 | 8-PowerTDFN | |
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | ||||||
| PD | 2500 to 104000 milliwatts | 2500 milliwatts | 104000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
