onsemi Single FETs, MOSFETs FDMS8020

Description
N-Channel 30V 26A (Ta), 42A (Tc) 2.5W (Ta), 65W (Tc) Surface Mount 8-PQFN (5x6)
Request a Quote Datasheet
Description
N-Channel 30V 26A (Ta), 42A (Tc) 2.5W (Ta), 65W (Tc) Surface Mount 8-PQFN (5x6)
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - FDMS8020TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS8020TR-ND
Single FETs, MOSFETs FDMS8020TR-ND
N-Channel 30V 26A (Ta), 42A (Tc) 2.5W (Ta), 65W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 30V 26A (Ta), 42A (Tc) 2.5W (Ta), 65W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8020 - 1038246-FDMS8020 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8020
1038246-FDMS8020
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8020 1038246-FDMS8020
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038246-FDMS8020 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 65W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 26A (Ta), 42A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 61nC @ 10V Max Input Capacitance: 3800pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.5 mOhm @ 26A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038246-FDMS8020
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 26A (Ta), 42A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 61nC @ 10V
Max Input Capacitance: 3800pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.5 mOhm @ 26A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FDMS8020
MOSFET FDMS8020
MOSFET 30V 42A 2.5mohms NCh PowerTrench MOSFET

MOSFET 30V 42A 2.5mohms NCh PowerTrench MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS8020 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS8020
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS8020
MOSFET N-CH 30V 26A/42A 8PQFN

MOSFET N-CH 30V 26A/42A 8PQFN

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDMS8020TR-ND 1038246-FDMS8020 FDMS8020 FDMS8020
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8020 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type 8-PowerTDFN SOT3; 8-PQFN (5x6), Power56 8-PowerTDFN
V(BR)DSS 30 volts
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