onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS7680TR FDMS7680TR

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040261-FDMS7680TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14A (Ta), 28A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 28nC @ 10V Max Input Capacitance: 1850pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.9 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040261-FDMS7680TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14A (Ta), 28A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 28nC @ 10V Max Input Capacitance: 1850pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.9 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS7680TR - 040261-FDMS7680TR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS7680TR
040261-FDMS7680TR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS7680TR 040261-FDMS7680TR
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040261-FDMS7680TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14A (Ta), 28A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 28nC @ 10V Max Input Capacitance: 1850pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.9 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040261-FDMS7680TR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 14A (Ta), 28A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 28nC @ 10V
Max Input Capacitance: 1850pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.9 mOhm @ 14A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 040261-FDMS7680TR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS7680TR
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 2500 to 33000 milliwatts
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