onsemi Single FETs, MOSFETs FDMS7672AS

Description
N-Channel 30V 19A (Ta), 42A (Tc) 2.5W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)
Request a Quote Datasheet
Description
N-Channel 30V 19A (Ta), 42A (Tc) 2.5W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - FDMS7672ASTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS7672ASTR-ND
Single FETs, MOSFETs FDMS7672ASTR-ND
N-Channel 30V 19A (Ta), 42A (Tc) 2.5W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 30V 19A (Ta), 42A (Tc) 2.5W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS7672AS - 103440-FDMS7672AS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS7672AS
103440-FDMS7672AS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS7672AS 103440-FDMS7672AS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 103440-FDMS7672AS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 46W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 19A (Ta), 42A (Tc) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 2820pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 103440-FDMS7672AS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 19A (Ta), 42A (Tc)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 2820pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS7672AS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS7672AS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS7672AS
MOSFET N-CH 30V 19A/42A 8PQFN

MOSFET N-CH 30V 19A/42A 8PQFN

Supplier's Site
Sheung Wan, Hong Kong
MOSFET PT7 30/20V Nch PowerTrench SyncFET

MOSFET PT7 30/20V Nch PowerTrench SyncFET

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDMS7672ASTR-ND 103440-FDMS7672AS FDMS7672AS FDMS7672AS
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS7672AS Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type 8-PowerTDFN SOT3; 8-PQFN (5x6), Power56 8-PowerTDFN
V(BR)DSS 30 volts
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