Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066998-FDMS7672
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 19A (Ta), 42A (Tc)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 2820pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET N-CH 30V 19A/28A 8PQFN
N-Channel 30V 19A (Ta), 28A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 30V 19A (Ta), 28A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 30V 19A (Ta), 28A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount 8-PQFN (5x6)
MOSFET 30V 28A N-Channel PowerTrench
POWER FIELD-EFFECT TRANSISTOR, 1
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 066998-FDMS7672 | FDMS7672 | FDMS7672CT-ND | FDMS7672 | FDMS7672 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS7672 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | |||
| PD | 2500 to 46000 milliwatts | 2500 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
