POWER FIELD-EFFECT TRANSISTOR, 1 Product overview: FDMS7672 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDMS7672 can be used for catalog matching and distributor lookup.
N-Channel 30V 19A (Ta), 28A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount 8-PQFN (5x6)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066998-FDMS7672
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 19A (Ta), 42A (Tc)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 2820pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
POWER FIELD-EFFECT TRANSISTOR, 1
MOSFET 30V 28A N-Channel PowerTrench
MOSFET N-CH 30V 19A/28A 8PQFN
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FDMS7672 | FDMS7672TR-ND | 066998-FDMS7672 | FDMS7672 | FDMS7672 | FDMS7672 |
| Product Name | MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS7672 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| PD | 2.5 milliwatts | 2500 to 46000 milliwatts | 2500 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | Bulk | 8-PowerTDFN | SOT3; 8-PQFN (5x6), Power56 | 8-PowerTDFN | 8-PowerTDFN |
