P-Channel 30V 15.2A (Ta), 28A (Tc) 2.5W (Ta), 73W (Tc) Surface Mount 8-PQFN (5x6)
P-Channel 30V 15.2A (Ta), 28A (Tc) 2.5W (Ta), 73W (Tc) Surface Mount 8-PQFN (5x6)
P-Channel 30V 15.2A (Ta), 28A (Tc) 2.5W (Ta), 73W (Tc) Surface Mount 8-PQFN (5x6)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 134625-FDMS6673BZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 15.2A (Ta), 28A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 130nC @ 10V
Max Input Capacitance: 5915pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 6.8 mOhm @ 15.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
SMALL SIGNAL FIELD-EFFECT TRANSI
MOSFET P-CH 30V 15.2A/28A 8PQFN
MOSFETs -30V 28A P-Channel PowerTrench Product overview: FDMS6673BZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -30V, 28A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, 28A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS6673BZ can be used for catalog matching and distributor lookup.
MOSFET P-CH 30V 15.2A/28A 8PQFN
MOSFET -30V 28A P-Channel PowerTrench
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMS6673BZTR-ND | 134625-FDMS6673BZ | FDMS6673BZ | 2088-FDMS6673BZ | FDMS6673BZ | FDMS6673BZ |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS6673BZ | Single FETs, MOSFETs | P-Channel -30V 28A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||
| Package Type | 8-PowerTDFN | SOT3; Power56 | 8-PowerTDFN | Reel | 8-PowerTDFN | |
| V(BR)DSS | 30 volts | 30 volts | ||||
| PD | 2500 to 73000 milliwatts | 2500 milliwatts | 2.5 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |