N-Channel 60V 10.6A (Ta), 22A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-MLP (5x6), Power56
N-Channel 60V 10.6A (Ta), 22A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-MLP (5x6), Power56
N-Channel 60V 10.6A (Ta), 22A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-MLP (5x6), Power56
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 124870-FDMS5672
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 10.6A (Ta), 22A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2800pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.5 mOhm @ 10.6A, 10V
Alternative Parts (Cross-Reference): FDS5170N7;
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFET N-CH 60V 10.6A/22A 8MLP
Power-56-8 MOSFETs ROHS
N CHANNEL MOSFET, 60V, 10.6A, POWER 56, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:10.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:2.5W RoHS Compliant: Yes
MOSFET Transistor, N Channel, 10.6 A, 60 V, 0.0094 ohm, 20 V, 3.2 V RoHS Compliant: Yes
Trans MOSFET N-CH 60V 10.6A 8-Pin MLP EP T/R
MOSFET N-CH 60V 10.6A/22A 8MLP
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDMS5672CT-ND | 124870-FDMS5672 | FDMS5672 | FDMS5672 | 30M0744 | 61M6271 | 598-FDMS5672 | FDMS5672 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS5672 | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | N Channel Mosfet, 60V, 10.6A, Power 56, Full Reel; Channel Type Onsemi | Mosfet Transistor, N Channel, 10.6 A, 60 V, 0.0094 Ohm, 20 V, 3.2 V Rohs Compliant Onsemi | Trans MOSFET N-CH 60V 10.6A 8-Pin MLP EP T/R | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Package Type | 8-PowerWDFN | SOT3; Power56 | 8-PowerWDFN | TO-3 | TO-3 | 8-PowerWDFN | ||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||
| PD | 2500 to 78000 milliwatts | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
