MOSFET N-CH 120V 18.5A/114A 8QFN
N-Ch MOSFET 120V 118A 4.0mΩ 5-Pin DUAL Product overview: FDMS4D0N12C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 120V, 118A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 120V, 118A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDMS4D0N12C can be used for catalog matching and distributor lookup.
N-Channel 120V 18.5A (Ta), 114A (Tc) 2.7W (Ta), 106W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 120V 18.5A (Ta), 114A (Tc) 2.7W (Ta), 106W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 120V 18.5A (Ta), 114A (Tc) 2.7W (Ta), 106W (Tc) Surface Mount 8-PQFN (5x6)
Win Source Part Number: 963315-FDMS4D0N12C
Category: Discrete Semiconductor Products>Transistors
Series: PowerTrench®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 114A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 67A, 10V
Vgs(th) (Max) @ Id: 4V @ 370A
Power Dissipation (Max): 2.7W (Ta), 106W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (5x6)
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 60 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: FDMS4D0N12COSDKR,FDM
Base Product Number: FDMS4
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
MOSFET N-CH 120V 18.5A/114A 8QFN
MOSFET, N-CH, 120V, 114A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:114A; Drain Source Voltage Vds:120V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMS4D0N12C | 1784409P | 1784409 | 278-FDMS4D0N12C | FDMS4D0N12COSDKR-ND | 963315-FDMS4D0N12C | FDMS4D0N12C | FDMS4D0N12C | 62AC6874 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | Dual 120V 118A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 120V, 114A, Pqfn; Transistor Polarity Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 120 volts | ||||||||
| IDSS | 18500 milliamps | 114000 milliamps | |||||||
| PD | 2700 milliwatts | 2700 to 106000 milliwatts |
