Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016069-FDMS3669S
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13A, 18A
Gate-Source Threshold Voltage: 2.7V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 1605pF @ 15V
Maximum Rds On at Id,Vgs: 10 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 18A 1W Surface Mount Power56
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 18A 1W Surface Mount Power56
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 18A 1W Surface Mount Power56
MOSFET 2N-CH 30V 13A/18A POWER56
MOSFET 30V Asymmetric Dual N-Channel Pwr Trench
MOSFET 2N-CH 30V 13A/18A POWER56
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 016069-FDMS3669S | FDMS3669STR-ND | FDMS3669S | FDMS3669S | FDMS3669S |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3669S | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) Asymmetrical | |||
| V(BR)DSS | 30 volts | 30 volts | |||
| PD | 1000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
