Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016069-FDMS3669S
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13A, 18A
Gate-Source Threshold Voltage: 2.7V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 1605pF @ 15V
Maximum Rds On at Id,Vgs: 10 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 18A 1W Surface Mount Power56
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 18A 1W Surface Mount Power56
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 18A 1W Surface Mount Power56
MOSFET 2N-CH 30V 13A/24A 8PQFN Product overview: FDMS3669S from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 13A, 24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 13A, 24A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDMS3669S can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 13A/18A POWER56
MOSFET 30V Asymmetric Dual N-Channel Pwr Trench
MOSFET 2N-CH 30V 13A/18A POWER56
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 016069-FDMS3669S | FDMS3669STR-ND | 289-FDMS3669S | FDMS3669S | FDMS3669S | FDMS3669S |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3669S | FET, MOSFET Arrays | 30V 13A 24A MOSFET Transistor | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) Asymmetrical | |||
| V(BR)DSS | 30 volts | 30 volts | ||||
| PD | 1000 milliwatts | 2.5 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT3; Power56 | 8-PowerTDFN | Bulk | 8-PowerTDFN |
