onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3662 FDMS3662

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 142617-FDMS3662 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 8.9A (Ta), 49A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 4620pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14.8 mOhm @ 8.9A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3662 - 142617-FDMS3662 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDMS3662TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDMS3662CT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDMS3662DKR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS3662 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Channel, 100V, 0.0114Ohm, 49A, Power 56-8; Channel Type Onsemi - 85W3147 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 142617-FDMS3662 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 8.9A (Ta), 49A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 4620pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14.8 mOhm @ 8.9A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3662 - 142617-FDMS3662 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3662
142617-FDMS3662
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3662 142617-FDMS3662
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 142617-FDMS3662 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 8.9A (Ta), 49A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 4620pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14.8 mOhm @ 8.9A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 142617-FDMS3662
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 8.9A (Ta), 49A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 75nC @ 10V
Max Input Capacitance: 4620pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14.8 mOhm @ 8.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDMS3662TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS3662TR-ND
Single FETs, MOSFETs FDMS3662TR-ND
N-Channel 100V 8.9A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 100V 8.9A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS3662CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS3662CT-ND
Single FETs, MOSFETs FDMS3662CT-ND
N-Channel 100V 8.9A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 100V 8.9A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS3662DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS3662DKR-ND
Single FETs, MOSFETs FDMS3662DKR-ND
N-Channel 100V 8.9A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 100V 8.9A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDMS3662
MOSFET FDMS3662
MOSFET 100V N-Channel PowerTrench

MOSFET 100V N-Channel PowerTrench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS3662 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS3662
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS3662
MOSFET N-CH 100V 8.9A/49A 8PQFN

MOSFET N-CH 100V 8.9A/49A 8PQFN

Supplier's Site
Mosfet, N Channel, 100V, 0.0114Ohm, 49A, Power 56-8; Channel Type Onsemi - 85W3147 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 100V, 0.0114Ohm, 49A, Power 56-8; Channel Type Onsemi
85W3147
Mosfet, N Channel, 100V, 0.0114Ohm, 49A, Power 56-8; Channel Type Onsemi 85W3147
MOSFET, N CHANNEL, 100V, 0.0114OHM, 49A, POWER 56-8; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:49A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:104W RoHS Compliant: Yes

MOSFET, N CHANNEL, 100V, 0.0114OHM, 49A, POWER 56-8; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:49A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:104W RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 142617-FDMS3662 FDMS3662TR-ND FDMS3662 FDMS3662 85W3147
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3662 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 100V, 0.0114Ohm, 49A, Power 56-8; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts
PD 2500 to 104000 milliwatts 104000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data