Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016066-FDMS3660S
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13A, 30A
Gate-Source Threshold Voltage: 2.7V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1765pF @ 15V
Maximum Rds On at Id,Vgs: 8 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFETs PowerStage Dual N-Ch PowerTrench MOSFET Product overview: FDMS3660S from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS3660S can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 30A/60A POWER56
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 30A, 60A 1W Surface Mount Power56
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 30A, 60A 1W Surface Mount Power56
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 30A, 60A 1W Surface Mount Power56
MOSFET PowerStage Dual N-Ch PowerTrench MOSFET
MOSFET PowerStage Dual N-Ch PowerTrench MOSFET
MOSFET 2N-CH 30V 30A/60A POWER56
Dual MOSFET, Dual N Channel, 60 A, 30 V, 0.0013 ohm, 10 V, 1.5 V RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 016066-FDMS3660S | 2088-FDMS3660S | FDMS3660S | FDMS3660SFSCT-ND | 598-FDMS3660S | FDMS3660S | FDMS3660S | 95W3165 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3660S | Dual MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET PowerStage Dual N-Ch PowerTrench MOSFET | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual Mosfet, Dual N Channel, 60 A, 30 V, 0.0013 Ohm, 10 V, 1.5 V Rohs Compliant Onsemi |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) Asymmetrical | N-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| PD | 1000 milliwatts | 2.2 milliwatts | 2500 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; Power56 | Reel | 8-PowerTDFN | 8-PowerTDFN | TO-3 |
