onsemi FET, MOSFET Arrays FDMS3660AS

Description
MOSFET 2N-CH 30V 13A/30A 8QFN
Request a Quote Datasheet
Description
MOSFET 2N-CH 30V 13A/30A 8QFN
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDMS3660AS - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDMS3660AS
FET, MOSFET Arrays FDMS3660AS
MOSFET 2N-CH 30V 13A/30A 8QFN

MOSFET 2N-CH 30V 13A/30A 8QFN

Supplier's Site Datasheet
FET, MOSFET Arrays - FDMS3660ASTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDMS3660ASTR-ND
FET, MOSFET Arrays FDMS3660ASTR-ND
Mosfet Array 2 N-Channel (Dual) 30V 13A, 30A 1W Surface Mount Power56

Mosfet Array 2 N-Channel (Dual) 30V 13A, 30A 1W Surface Mount Power56

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - 1145078-FDMS3660AS - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
1145078-FDMS3660AS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays 1145078-FDMS3660AS
Win Source Part Number: 1145078-FDMS3660AS Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Series: PowerTrench® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 30A Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Power - Max: 1W Package / Case: 8-PowerTDFN Supplier Device Package: Power56 Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 78 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: FDMS3660ASDKR,FDMS36 60ASCT,FDMS3660ASTR Base Product Number: FDMS3660 Product Status: Obsolete

Win Source Part Number: 1145078-FDMS3660AS
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Series: PowerTrench®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 30A
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power - Max: 1W
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: FDMS3660ASDKR,FDMS3660ASCT,FDMS3660ASTR
Base Product Number: FDMS3660
Product Status: Obsolete

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET COMPUTING MOSFET

MOSFET COMPUTING MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS3660AS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS3660AS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS3660AS
MOSFET 2N-CH 30V 13A/30A POWER56

MOSFET 2N-CH 30V 13A/30A POWER56

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDMS3660AS FDMS3660ASTR-ND 1145078-FDMS3660AS FDMS3660AS FDMS3660AS
Product Name FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; 2 N-Channel (Dual) N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts
IDSS 13000 milliamps
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