Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038236-FDMS3622S
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 17.5A, 34A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 1570pF @ 13V
Maximum Rds On at Id,Vgs: 5 mOhm @ 17.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 17.5A, 34A 1W Surface Mount Power56
MOSFET 2N-CH 25V 17.5A/34A PWR56
SMALL SIGNAL FIELD-EFFECT TRANSI
MOSFET PowerStage 25V Dual N-Channel MOSFET
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1038236-FDMS3622S | FDMS3622STR-ND | FDMS3622S | FDMS3622S | FDMS3622S |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3622S | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays | MOSFET |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) Asymmetrical | |||
| V(BR)DSS | 25 volts | 25 volts | |||
| PD | 1000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
