SMALL SIGNAL FIELD-EFFECT TRANSI
Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 17.5A, 34A 1W Surface Mount Power56
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038236-FDMS3622S
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 17.5A, 34A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 1570pF @ 13V
Maximum Rds On at Id,Vgs: 5 mOhm @ 17.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET PowerStage 25V Dual N-Channel MOSFET
MOSFET 2N-CH 25V 17.5A/34A PWR56
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDMS3622S | FDMS3622STR-ND | 1038236-FDMS3622S | FDMS3622S | FDMS3622S |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3622S | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) Asymmetrical | N-Channel | |||
| V(BR)DSS | 25 volts | 25 volts | |||
| IDSS | 17500 milliamps | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
