onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3610S FDMS3610S

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038235-FDMS3610S
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 17.5A, 30A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 1570pF @ 13V
Maximum Rds On at Id,Vgs: 5 mOhm @ 17.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 17.5A, 30A 1W Surface Mount Power56

Asymmetric Dual N-Channel PowerTrench® Power Stage, 25V, 3000-REEL Product overview: FDMS3610S from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 25V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 25V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDMS3610S can be used for catalog matching and distributor lookup.