Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016063-FDMS3606S
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13A, 27A
Gate-Source Threshold Voltage: 2.7V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1785pF @ 15V
Maximum Rds On at Id,Vgs: 8 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 27A 1W Surface Mount Power56
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 27A 1W Surface Mount Power56
MOSFET 2N-CH 30V 13A/27A POWER56
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 016063-FDMS3606S | FDMS3606SCT-ND | FDMS3606S | FDMS3606S |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3606S | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | |||
| V(BR)DSS | 30 volts | |||
| PD | 1000 milliwatts |
