onsemi FET, MOSFET Arrays FDMS3604AS

Description
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 23A 1W Surface Mount Power56
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 23A 1W Surface Mount Power56
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDMS3604ASFSTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDMS3604ASFSTR-ND
FET, MOSFET Arrays FDMS3604ASFSTR-ND
Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 23A 1W Surface Mount Power56

Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 23A 1W Surface Mount Power56

Buy Now Datasheet
 - FDMS3604AS - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor, 13A, 30V, 2-Element, N-Channel, MOSFET

Small Signal Field-Effect Transistor, 13A, 30V, 2-Element, N-Channel, MOSFET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3604AS - 125175-FDMS3604AS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3604AS
125175-FDMS3604AS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3604AS 125175-FDMS3604AS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 125175-FDMS3604AS Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13A, 23A Gate-Source Threshold Voltage: 2.7V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 1695pF @ 15V Maximum Rds On at Id,Vgs: 8 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 125175-FDMS3604AS
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13A, 23A
Gate-Source Threshold Voltage: 2.7V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1695pF @ 15V
Maximum Rds On at Id,Vgs: 8 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
30V 13A 23A MOSFET Transistor
289-FDMS3604AS
30V 13A 23A MOSFET Transistor 289-FDMS3604AS
MOSFET 2N-CH 30V 13A/23A 8PQFN Product overview: FDMS3604AS from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 13A, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 13A, 23A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDMS3604AS can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 30V 13A/23A 8PQFN Product overview: FDMS3604AS from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 13A, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 13A, 23A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDMS3604AS can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS3604AS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS3604AS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS3604AS
MOSFET 2N-CH 30V 13A/23A 8PQFN

MOSFET 2N-CH 30V 13A/23A 8PQFN

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V Dual N-Channel PowerTrench MOSFET

MOSFET 30V Dual N-Channel PowerTrench MOSFET

Buy Now Datasheet

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDMS3604ASFSTR-ND FDMS3604AS 125175-FDMS3604AS 289-FDMS3604AS FDMS3604AS FDMS3604AS
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3604AS 30V 13A 23A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Package Type 8-PowerTDFN DFN8 SOT3; Power56 Bulk
Polarity N-Channel N-Channel
V(BR)DSS 30 volts
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