onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3604AS FDMS3604AS

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 125175-FDMS3604AS
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13A, 23A
Gate-Source Threshold Voltage: 2.7V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1695pF @ 15V
Maximum Rds On at Id,Vgs: 8 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

Small Signal Field-Effect Transistor, 13A, 30V, 2-Element, N-Channel, MOSFET

MOSFET 2N-CH 30V 13A/23A 8PQFN Product overview: FDMS3604AS from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 13A, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 13A, 23A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDMS3604AS can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 23A 1W Surface Mount Power56