Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 15A, 30A 2.2W, 2.5W Surface Mount Power56
Small Signal Field-Effect Transistor, 15A, 25V, 2-Element, N-Channel, MOSFET
Small Signal Field-Effect Transistor, 15A, 25V, 2-Element, N-Channel, MOSFET
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066991-FDMS3600AS
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Maximum Power Dissipation: 2.2W, 2.5W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 15A, 30A
Gate-Source Threshold Voltage: 2.7V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 1770pF @ 13V
Maximum Rds On at Id,Vgs: 5.6 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET 2N-CH 25V 15A/30A POWER56
| DigiKey | Rochester Electronics | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | RF MOSFET Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMS3600ASTR-ND | FDMS3600AS | 066991-FDMS3600AS | FDMS3600AS | FDMS3600AS |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3600AS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Package Type | 8-PowerTDFN | QFN8 | SOT3; Power56 | 8-PowerTDFN | |
| Polarity | N-Channel | N-Channel | |||
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR) |
