onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3600AS FDMS3600AS

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066991-FDMS3600AS Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Maximum Power Dissipation: 2.2W, 2.5W Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 15A, 30A Gate-Source Threshold Voltage: 2.7V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 1770pF @ 13V Maximum Rds On at Id,Vgs: 5.6 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066991-FDMS3600AS Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Maximum Power Dissipation: 2.2W, 2.5W Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 15A, 30A Gate-Source Threshold Voltage: 2.7V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 1770pF @ 13V Maximum Rds On at Id,Vgs: 5.6 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3600AS - 066991-FDMS3600AS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3600AS
066991-FDMS3600AS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3600AS 066991-FDMS3600AS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066991-FDMS3600AS Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Maximum Power Dissipation: 2.2W, 2.5W Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 15A, 30A Gate-Source Threshold Voltage: 2.7V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 1770pF @ 13V Maximum Rds On at Id,Vgs: 5.6 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066991-FDMS3600AS
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Maximum Power Dissipation: 2.2W, 2.5W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 15A, 30A
Gate-Source Threshold Voltage: 2.7V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 1770pF @ 13V
Maximum Rds On at Id,Vgs: 5.6 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
FET, MOSFET Arrays - FDMS3600ASTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDMS3600ASTR-ND
FET, MOSFET Arrays FDMS3600ASTR-ND
Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 15A, 30A 2.2W, 2.5W Surface Mount Power56

Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 15A, 30A 2.2W, 2.5W Surface Mount Power56

Buy Now Datasheet
 - FDMS3600AS - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor, 15A, 25V, 2-Element, N-Channel, MOSFET

Small Signal Field-Effect Transistor, 15A, 25V, 2-Element, N-Channel, MOSFET

Supplier's Site Datasheet
 - FDMS3600AS - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor, 15A, 25V, 2-Element, N-Channel, MOSFET

Small Signal Field-Effect Transistor, 15A, 25V, 2-Element, N-Channel, MOSFET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS3600AS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS3600AS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS3600AS
MOSFET 2N-CH 25V 15A/30A POWER56

MOSFET 2N-CH 25V 15A/30A POWER56

Supplier's Site
Sheung Wan, Hong Kong
MOSFET DUAL N-CH. ER TRENCH MO

MOSFET DUAL N-CH. ER TRENCH MO

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Rochester Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF MOSFET Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 066991-FDMS3600AS FDMS3600ASTR-ND FDMS3600AS FDMS3600AS FDMS3600AS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3600AS FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
V(BR)DSS 25 volts
PD 2200 to 2500 milliwatts
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