onsemi Single FETs, MOSFETs FDMS3572

Description
MOSFET N-CH 80V 8.8A/22A 8MLP
Request a Quote Datasheet
Description
MOSFET N-CH 80V 8.8A/22A 8MLP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDMS3572 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMS3572
Single FETs, MOSFETs FDMS3572
MOSFET N-CH 80V 8.8A/22A 8MLP

MOSFET N-CH 80V 8.8A/22A 8MLP

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3572 - 136336-FDMS3572 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3572
136336-FDMS3572
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3572 136336-FDMS3572
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 136336-FDMS3572 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Family Name: FDMS3572 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 8.8A (Ta), 22A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 2490pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16.5 mOhm @ 8.8A, 10V Alternative Parts (Cross-Reference): Si7852DP-T1-E3; Si7852DP-T1-GE3; Si7852DP-E3; Si7852DP-T1; Introduction Date: July 28, 2006 ECCN: EAR99 Country of Origin: Thailand Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 136336-FDMS3572
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Family Name: FDMS3572
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 8.8A (Ta), 22A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 2490pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16.5 mOhm @ 8.8A, 10V
Alternative Parts (Cross-Reference): Si7852DP-T1-E3; Si7852DP-T1-GE3; Si7852DP-E3; Si7852DP-T1;
Introduction Date: July 28, 2006
ECCN: EAR99
Country of Origin: Thailand
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDMS3572CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS3572CT-ND
Single FETs, MOSFETs FDMS3572CT-ND
N-Channel 80V 8.8A (Ta), 22A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-MLP (5x6), Power56

N-Channel 80V 8.8A (Ta), 22A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-MLP (5x6), Power56

Buy Now Datasheet
Single FETs, MOSFETs - FDMS3572DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS3572DKR-ND
Single FETs, MOSFETs FDMS3572DKR-ND
N-Channel 80V 8.8A (Ta), 22A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-MLP (5x6), Power56

N-Channel 80V 8.8A (Ta), 22A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-MLP (5x6), Power56

Buy Now Datasheet
Single FETs, MOSFETs - FDMS3572TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS3572TR-ND
Single FETs, MOSFETs FDMS3572TR-ND
N-Channel 80V 8.8A (Ta), 22A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-MLP (5x6), Power56

N-Channel 80V 8.8A (Ta), 22A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-MLP (5x6), Power56

Buy Now Datasheet
Singapore
80V MOSFET Transistor
2088-FDMS3572
80V MOSFET Transistor 2088-FDMS3572
MOSFETs 80V N-Ch UltraFET PowerTrench MOSFET Product overview: FDMS3572 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS3572 can be used for catalog matching and distributor lookup.

MOSFETs 80V N-Ch UltraFET PowerTrench MOSFET Product overview: FDMS3572 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS3572 can be used for catalog matching and distributor lookup.

Supplier's Site
Mosfet, N, Smd, Mlp; Channel Type Onsemi - 61M6269 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, Smd, Mlp; Channel Type Onsemi
61M6269
Mosfet, N, Smd, Mlp; Channel Type Onsemi 61M6269
MOSFET, N, SMD, MLP; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:8.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.2V; Power Dissipation:2.5W RoHS Compliant: Yes

MOSFET, N, SMD, MLP; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:8.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.2V; Power Dissipation:2.5W RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET
FDMS3572
MOSFET FDMS3572
MOSFET 80V N-Ch UltraFET PowerTrench MOSFET

MOSFET 80V N-Ch UltraFET PowerTrench MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS3572 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS3572
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS3572
MOSFET N-CH 80V 8.8A/22A 8MLP

MOSFET N-CH 80V 8.8A/22A 8MLP

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDMS3572 136336-FDMS3572 FDMS3572CT-ND 2088-FDMS3572 61M6269 FDMS3572 FDMS3572
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS3572 Single FETs, MOSFETs 80V MOSFET Transistor Mosfet, N, Smd, Mlp; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 80 volts 80 volts
IDSS 8800 milliamps 8800 milliamps
PD 2500 milliwatts 2500 to 78000 milliwatts 2.5 milliwatts 2500 milliwatts
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