N-CH MOSFET 30V 19A PQFN EP 8-Pin Si Product overview: FDMS0312S from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 19A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 19A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDMS0312S can be used for catalog matching and distributor lookup.
N-Channel 30V 19A (Ta), 42A (Tc) 2.5W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 30V 19A (Ta), 42A (Tc) 2.5W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 30V 19A (Ta), 42A (Tc) 2.5W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016058-FDMS0312S
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Family Name: FDMS0312S
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 19A (Ta), 42A (Tc)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 2820pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.9 mOhm @ 18A, 10V
Alternative Parts (Cross-Reference): BSC049N03MSC G; BSC049N03MSCGXT; TSM036N03PQ56 RLG; RS1E180BNTB;
Introduction Date: December 01, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs
MOSFET, N CH, 30V, 42A, POWER 56, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:42A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.9V RoHS Compliant: Yes
MOSFET N-CH 30V 19A/42A 8PQFN
MOSFET 30V N-Chan SyncFET PowerTrench
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FDMS0312S | FDMS0312STR-ND | 016058-FDMS0312S | 92R5546 | FDMS0312S | FDMS0312S |
| Product Name | 30V 19A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS0312S | Mosfet, N Ch, 30V, 42A, Power 56, Full Reel; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| PD | 2500 milliwatts | 2500 to 46000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
