onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS030N06B FDMS030N06B

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038230-FDMS030N06B Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 22.1A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 7560pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038230-FDMS030N06B Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 22.1A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 7560pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS030N06B - 1038230-FDMS030N06B - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS030N06B
1038230-FDMS030N06B
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS030N06B 1038230-FDMS030N06B
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038230-FDMS030N06B Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 22.1A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 7560pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038230-FDMS030N06B
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 22.1A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 75nC @ 10V
Max Input Capacitance: 7560pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDMS030N06B - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMS030N06B
Single FETs, MOSFETs FDMS030N06B
MOSFET N-CH 60V 22.1A/100A 8PQFN

MOSFET N-CH 60V 22.1A/100A 8PQFN

Supplier's Site Datasheet
Single FETs, MOSFETs - FDMS030N06BTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS030N06BTR-ND
Single FETs, MOSFETs FDMS030N06BTR-ND
N-Channel 60V 22.1A (Ta), 100A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 60V 22.1A (Ta), 100A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS030N06BCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS030N06BCT-ND
Single FETs, MOSFETs FDMS030N06BCT-ND
N-Channel 60V 22.1A (Ta), 100A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 60V 22.1A (Ta), 100A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS030N06BDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS030N06BDKR-ND
Single FETs, MOSFETs FDMS030N06BDKR-ND
N-Channel 60V 22.1A (Ta), 100A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 60V 22.1A (Ta), 100A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET NCh 80V 120A 5.3mOhm PowerTrench MOSFET

MOSFET NCh 80V 120A 5.3mOhm PowerTrench MOSFET

Buy Now Datasheet
Mosfet, N-Ch, 60V, 100A, Pqfn; Transistor Polarity Onsemi - 07AH3925 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 100A, Pqfn; Transistor Polarity Onsemi
07AH3925
Mosfet, N-Ch, 60V, 100A, Pqfn; Transistor Polarity Onsemi 07AH3925
MOSFET, N-CH, 60V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 60V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS030N06B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS030N06B
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS030N06B
MOSFET N-CH 60V 22.1A/100A 8PQFN

MOSFET N-CH 60V 22.1A/100A 8PQFN

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1038230-FDMS030N06B FDMS030N06B FDMS030N06BTR-ND FDMS030N06B 07AH3925 FDMS030N06B
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS030N06B Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 60V, 100A, Pqfn; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts 60 volts
PD 2500 to 104000 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-PQFN (5x6), Power56 8-PowerTDFN 8-PowerTDFN TO-3 8-PowerTDFN
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