Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038230-FDMS030N06B
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 22.1A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 75nC @ 10V
Max Input Capacitance: 7560pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFETs NCh 80V 120A 5.3mOhm PowerTrench MOSFET Product overview: FDMS030N06B from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 120A, 5.3mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 120A, 5.3mOhm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS030N06B can be used for catalog matching and distributor lookup.
N-Channel 60V 22.1A (Ta), 100A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 60V 22.1A (Ta), 100A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 60V 22.1A (Ta), 100A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
MOSFET, N-CH, 60V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power RoHS Compliant: Yes
MOSFET NCh 80V 120A 5.3mOhm PowerTrench MOSFET
MOSFET N-CH 60V 22.1A/100A 8PQFN
MOSFET N-CH 60V 22.1A/100A 8PQFN
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1038230-FDMS030N06B | 2088-FDMS030N06B | FDMS030N06BTR-ND | 07AH3925 | FDMS030N06B | FDMS030N06B | FDMS030N06B |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS030N06B | 80V 120A 5.3mOhm MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 100A, Pqfn; Transistor Polarity Onsemi | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | |||||
| PD | 2500 to 104000 milliwatts | 104 milliwatts | 2500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; 8-PQFN (5x6), Power56 | Reel | 8-PowerTDFN | TO-3 | 8-PowerTDFN | 8-PowerTDFN |
