onsemi Single FETs, MOSFETs FDMS0308CS

Description
N-Channel 30V 22A (Ta) 2.5W (Ta), 65W (Tc) Surface Mount 8-PQFN (5x6)
Request a Quote Datasheet
Description
N-Channel 30V 22A (Ta) 2.5W (Ta), 65W (Tc) Surface Mount 8-PQFN (5x6)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDMS0308CSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS0308CSTR-ND
Single FETs, MOSFETs FDMS0308CSTR-ND
N-Channel 30V 22A (Ta) 2.5W (Ta), 65W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 30V 22A (Ta) 2.5W (Ta), 65W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
FETs - Single - FDMS0308CS - 1173836-FDMS0308CS - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FDMS0308CS
1173836-FDMS0308CS
FETs - Single - FDMS0308CS 1173836-FDMS0308CS
Manufacturer: ON Semiconductor Win Source Part Number: 1173836-FDMS0308CS Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-PQFN (5x6) Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: 8-PowerTDFN Power Dissipation (Maximum): 2.5W, 65W Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 22A Rds On (Maximum) at Id, Vgs: 3mOhm at 21A, 10V Gate Source Voltage(th) (Maximum) at Id: 3V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 66nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 4225pF at 15V

Manufacturer: ON Semiconductor
Win Source Part Number: 1173836-FDMS0308CS
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-PQFN (5x6)
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: 8-PowerTDFN
Power Dissipation (Maximum): 2.5W, 65W
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 22A
Rds On (Maximum) at Id, Vgs: 3mOhm at 21A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3V at 1mA
Gate Charge (Qg) (Maximum) at Vgs: 66nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 4225pF at 15V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS0308CS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS0308CS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS0308CS
MOSFET N-CH 30V 22A 8PQFN

MOSFET N-CH 30V 22A 8PQFN

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDMS0308CSTR-ND 1173836-FDMS0308CS FDMS0308CS
Product Name Single FETs, MOSFETs FETs - Single - FDMS0308CS Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type 8-PowerTDFN SOT3 8-PowerTDFN
V(BR)DSS 30 volts
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