onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS0306AS FDMS0306AS

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016053-FDMS0306AS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 59W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 26A (Ta), 49A (Tc) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 57nC @ 10V Max Input Capacitance: 3550pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.4 mOhm @ 26A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016053-FDMS0306AS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 59W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 26A (Ta), 49A (Tc) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 57nC @ 10V Max Input Capacitance: 3550pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.4 mOhm @ 26A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS0306AS - 016053-FDMS0306AS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS0306AS
016053-FDMS0306AS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS0306AS 016053-FDMS0306AS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016053-FDMS0306AS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 59W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 26A (Ta), 49A (Tc) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 57nC @ 10V Max Input Capacitance: 3550pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.4 mOhm @ 26A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016053-FDMS0306AS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 59W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 26A (Ta), 49A (Tc)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 57nC @ 10V
Max Input Capacitance: 3550pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.4 mOhm @ 26A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDMS0306ASCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS0306ASCT-ND
Single FETs, MOSFETs FDMS0306ASCT-ND
N-Channel 30V 26A (Ta), 49A (Tc) 2.5W (Ta), 59W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 30V 26A (Ta), 49A (Tc) 2.5W (Ta), 59W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS0306ASDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS0306ASDKR-ND
Single FETs, MOSFETs FDMS0306ASDKR-ND
N-Channel 30V 26A (Ta), 49A (Tc) 2.5W (Ta), 59W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 30V 26A (Ta), 49A (Tc) 2.5W (Ta), 59W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS0306ASTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS0306ASTR-ND
Single FETs, MOSFETs FDMS0306ASTR-ND
N-Channel 30V 26A (Ta), 49A (Tc) 2.5W (Ta), 59W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 30V 26A (Ta), 49A (Tc) 2.5W (Ta), 59W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS0306AS - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMS0306AS
Single FETs, MOSFETs FDMS0306AS
MOSFET N-CH 30V 26A/49A 8PQFN

MOSFET N-CH 30V 26A/49A 8PQFN

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS0306AS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS0306AS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS0306AS
MOSFET N-CH 30V 26A/49A 8PQFN

MOSFET N-CH 30V 26A/49A 8PQFN

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 016053-FDMS0306AS FDMS0306ASCT-ND FDMS0306AS FDMS0306AS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS0306AS Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 30 volts 30 volts
PD 2500 to 59000 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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