Win Source Part Number: 971749-FDMQ86530L
Category: Discrete Semiconductor Products>Transistors
Series: GreenBridge™ PowerTrench®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 4 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power - Max: 1.9W
Package / Case: 12-WDFN Exposed Pad
Supplier Device Package: 12-MLP (5x4.5)
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2295pF @ 30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: FDMQ86530LTR,FDMQ865
Base Product Number: FDMQ86530
MOSFETs 60V N-Channel PowerTrench MOSFET Product overview: FDMQ86530L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMQ86530L can be used for catalog matching and distributor lookup.
Mosfet Array 4 N-Channel (H-Bridge) 60V 8A 1.9W Surface Mount 12-MLP (5x4.5)
Mosfet Array 4 N-Channel (H-Bridge) 60V 8A 1.9W Surface Mount 12-MLP (5x4.5)
Mosfet Array 4 N-Channel (H-Bridge) 60V 8A 1.9W Surface Mount 12-MLP (5x4.5)
MOSFET 4N-CH 60V 8A 12MLP
MOSFET 4N-CH 60V 8A 12MLP
MOSFET, N-CH, 60V, 8A, WDFN-12; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0175ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power DissipationRoHS Compliant: Yes
MOSFET 60V N-Channel PowerTrench MOSFET
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 971749-FDMQ86530L | 2088-FDMQ86530L | FDMQ86530LCT-ND | FDMQ86530L | FDMQ86530L | 46AC0789 | FDMQ86530L |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | N-Channel 60V MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 8A, Wdfn-12; Transistor Polarity Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; 4 N-Channel (Full Bridge) | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3 | Reel | 12-WDFN Exposed Pad | 12-WDFN Exposed Pad | TO-3 | ||
| MOSFET Operating Mode | Enhancement | ||||||
| PD | 22 milliwatts |
