Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066989-FDMQ8403
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 12-MLP (5x4.5)
Maximum Power Dissipation: 1.9W
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 3.1A
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 5nC @ 10V
Max Input Capacitance: 215pF @ 15V
Maximum Rds On at Id,Vgs: 110 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
Mosfet Array 4 N-Channel (H-Bridge) 100V 3.1A 1.9W Surface Mount 12-MLP (5x4.5)
Mosfet Array 4 N-Channel (H-Bridge) 100V 3.1A 1.9W Surface Mount 12-MLP (5x4.5)
Mosfet Array 4 N-Channel (H-Bridge) 100V 3.1A 1.9W Surface Mount 12-MLP (5x4.5)
MOSFET 4N-CH 100V 3.1A 12MLP
POWER FIELD-EFFECT TRANSISTOR, 3
MOSFET SER BOOST LED DRVR
MOSFET, QUAD N-CH, 100V, 6A, 17W, WDFN; Transistor Polarity:Quad N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; RoHS Compliant: Yes
MOSFET 4N-CH 100V 3.1A 12MLP
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ODG (Origin Data Global) | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 066989-FDMQ8403 | FDMQ8403CT-ND | FDMQ8403 | FDMQ8403 | 598-FDMQ8403 | FDMQ8403 | 07AH3924 | FDMQ8403 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMQ8403 | FET, MOSFET Arrays | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET SER BOOST LED DRVR | MOSFET | Mosfet, Quad N-Ch, 100V, 6A, 17W, Wdfn; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 4 N-Channel (Full Bridge) | N-Channel; 4 N-Channel (Half Bridge) | |||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | ||||
| PD | 1900 milliwatts | 1900 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; 12-MLP (5x4.5) | 12-WDFN Exposed Pad | 12-WDFN Exposed Pad | 12-WDFN Exposed Pad | TO-3 |
