FDMQ8205 is a quad MOSFET bridge rectifier designed for high-efficiency Power over Ethernet (PoE) powered device applications, replacing traditional diode bridges to reduce power loss and thermal issues. It features two N-channel and two P-channel MOSFETs with a maximum drain-source voltage rating of 80 V and continuous input current capability of 1.7 A at 25 °C. The device is packaged in a compact MLP 4.5x5 mm surface-mount package and operates over a junction temperature range of -40 °C to 125 °C. It is compliant with IEEE 802.3at PoE standards, supports detection and classification, and maintains a backfeed voltage of 2.7 V. The component is RoHS compliant and meets UL 94 V-0 flammability requirements.
MOSFET, DUAL N & P-CH, 57V, 150DEG C ROHS COMPLIANT: YES
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 54AH6243 |
| Product Name | Mosfet, Dual N & P-Ch, 57V, 150Deg C Rohs Compliant Onsemi |
| Package Type | TO-3 |
