onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMQ8203 FDMQ8203

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066988-FDMQ8203 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 12-MLP (5x4.5) Maximum Power Dissipation: 2.5W Drain-Source Breakdown Voltage: 100V, 80V Continuous Drain Current at 25°C: 3.4A, 2.6A Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 5nC @ 10V Max Input Capacitance: 210pF @ 50V Maximum Rds On at Id,Vgs: 110 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMQ8203 - 066988-FDMQ8203 - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - FDMQ8203 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • FET, MOSFET Arrays - FDMQ8203DKR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - FDMQ8203CT-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - FDMQ8203TR-ND - DigiKey
    DigiKey
  • Mosfet, Nnpp Channel, Mlp 4.5X5; Transistor Polarity Onsemi - 88T3301 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMQ8203 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066988-FDMQ8203 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 12-MLP (5x4.5) Maximum Power Dissipation: 2.5W Drain-Source Breakdown Voltage: 100V, 80V Continuous Drain Current at 25°C: 3.4A, 2.6A Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 5nC @ 10V Max Input Capacitance: 210pF @ 50V Maximum Rds On at Id,Vgs: 110 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMQ8203 - 066988-FDMQ8203 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMQ8203
066988-FDMQ8203
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMQ8203 066988-FDMQ8203
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066988-FDMQ8203 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 12-MLP (5x4.5) Maximum Power Dissipation: 2.5W Drain-Source Breakdown Voltage: 100V, 80V Continuous Drain Current at 25°C: 3.4A, 2.6A Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 5nC @ 10V Max Input Capacitance: 210pF @ 50V Maximum Rds On at Id,Vgs: 110 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066988-FDMQ8203
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 12-MLP (5x4.5)
Maximum Power Dissipation: 2.5W
Drain-Source Breakdown Voltage: 100V, 80V
Continuous Drain Current at 25°C: 3.4A, 2.6A
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 5nC @ 10V
Max Input Capacitance: 210pF @ 50V
Maximum Rds On at Id,Vgs: 110 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs

Buy Now Datasheet
FET, MOSFET Arrays - FDMQ8203 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDMQ8203
FET, MOSFET Arrays FDMQ8203
MOSFET 2N/2P-CH 100V/80V 12-MLP

MOSFET 2N/2P-CH 100V/80V 12-MLP

Supplier's Site Datasheet
FET, MOSFET Arrays - FDMQ8203DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDMQ8203DKR-ND
FET, MOSFET Arrays FDMQ8203DKR-ND
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V, 80V 3.4A, 2.6A 2.5W Surface Mount 12-MLP (5x4.5)

Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V, 80V 3.4A, 2.6A 2.5W Surface Mount 12-MLP (5x4.5)

Buy Now Datasheet
FET, MOSFET Arrays - FDMQ8203CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDMQ8203CT-ND
FET, MOSFET Arrays FDMQ8203CT-ND
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V, 80V 3.4A, 2.6A 2.5W Surface Mount 12-MLP (5x4.5)

Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V, 80V 3.4A, 2.6A 2.5W Surface Mount 12-MLP (5x4.5)

Buy Now Datasheet
FET, MOSFET Arrays - FDMQ8203TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDMQ8203TR-ND
FET, MOSFET Arrays FDMQ8203TR-ND
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V, 80V 3.4A, 2.6A 2.5W Surface Mount 12-MLP (5x4.5)

Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V, 80V 3.4A, 2.6A 2.5W Surface Mount 12-MLP (5x4.5)

Buy Now Datasheet
Mosfet, Nnpp Channel, Mlp 4.5X5; Transistor Polarity Onsemi - 88T3301 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Nnpp Channel, Mlp 4.5X5; Transistor Polarity Onsemi
88T3301
Mosfet, Nnpp Channel, Mlp 4.5X5; Transistor Polarity Onsemi 88T3301
MOSFET, NNPP CHANNEL, MLP 4.5X5; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.085ohm; Transistor Mounting:Surface Mount; No. of Pins:12Pins RoHS Compliant: Yes

MOSFET, NNPP CHANNEL, MLP 4.5X5; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.085ohm; Transistor Mounting:Surface Mount; No. of Pins:12Pins RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDMQ8203
MOSFET FDMQ8203
MOSFET Dual PT5 N-Ch & Dual PT1 PCH PowerTrench

MOSFET Dual PT5 N-Ch & Dual PT1 PCH PowerTrench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMQ8203 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMQ8203
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMQ8203
MOSFET 2N/2P-CH 100V/80V 12-MLP

MOSFET 2N/2P-CH 100V/80V 12-MLP

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 066988-FDMQ8203 FDMQ8203 FDMQ8203DKR-ND 88T3301 FDMQ8203 FDMQ8203
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMQ8203 FET, MOSFET Arrays FET, MOSFET Arrays Mosfet, Nnpp Channel, Mlp 4.5X5; Transistor Polarity Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; 2 N and 2 P-Channel (Full Bridge) P-Channel
V(BR)DSS 100 to 80 volts 100 to 80 volts
PD 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 12-MLP (5x4.5) 12-WDFN Exposed Pad 12-WDFN Exposed Pad TO-3
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