Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V, 80V 3.4A, 2.6A 2.5W Surface Mount 12-MLP (5x4.5)
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V, 80V 3.4A, 2.6A 2.5W Surface Mount 12-MLP (5x4.5)
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V, 80V 3.4A, 2.6A 2.5W Surface Mount 12-MLP (5x4.5)
MOSFET 2N/2P-CH 100V/80V 12-MLP
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066988-FDMQ8203
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 12-MLP (5x4.5)
Maximum Power Dissipation: 2.5W
Drain-Source Breakdown Voltage: 100V, 80V
Continuous Drain Current at 25°C: 3.4A, 2.6A
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 5nC @ 10V
Max Input Capacitance: 210pF @ 50V
Maximum Rds On at Id,Vgs: 110 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFETs Dual PT5 N-Ch & Dual PT1 PCH PowerTrench Product overview: FDMQ8203 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMQ8203 can be used for catalog matching and distributor lookup.
MOSFET 2N/2P-CH 100V/80V 12-MLP
MOSFET, NNPP CHANNEL, MLP 4.5X5; Transistor Polarity:Complementa
MOSFET Dual PT5 N-Ch & Dual PT1 PCH PowerTrench
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMQ8203DKR-ND | FDMQ8203 | 066988-FDMQ8203 | 2088-FDMQ8203 | FDMQ8203 | 88T3301 | FDMQ8203 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMQ8203 | Dual MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Nnpp Channel, Mlp 4.5X5; Transistor Polarity Onsemi | MOSFET |
| Package Type | 12-WDFN Exposed Pad | 12-WDFN Exposed Pad | SOT3; 12-MLP (5x4.5) | Reel | TO-3 | ||
| Polarity | P-Channel; 2 N and 2 P-Channel (Full Bridge) | P-Channel | N-Channel; P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 to 80 volts | 100 to 80 volts | |||||
| IDSS | 3400 milliamps | 6000 milliamps |
