onsemi Single FETs, MOSFETs FDME910PZT

Description
P-Channel 20V 8A (Ta) 2.1W (Ta) Surface Mount MicroFet 1.6x1.6 Thin
Request a Quote Datasheet
Description
P-Channel 20V 8A (Ta) 2.1W (Ta) Surface Mount MicroFet 1.6x1.6 Thin
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDME910PZTTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDME910PZTTR-ND
Single FETs, MOSFETs FDME910PZTTR-ND
P-Channel 20V 8A (Ta) 2.1W (Ta) Surface Mount MicroFet 1.6x1.6 Thin

P-Channel 20V 8A (Ta) 2.1W (Ta) Surface Mount MicroFet 1.6x1.6 Thin

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDME910PZT - 016048-FDME910PZT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDME910PZT
016048-FDME910PZT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDME910PZT 016048-FDME910PZT
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016048-FDME910PZT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: MicroFet 1.6x1.6 Thin Dimension: 6-PowerUFDFN Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 8A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 21nC @ 4.5V Max Input Capacitance: 2110pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 24 mOhm @ 8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance Quantity per package: 5k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016048-FDME910PZT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: MicroFet 1.6x1.6 Thin
Dimension: 6-PowerUFDFN
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 21nC @ 4.5V
Max Input Capacitance: 2110pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 24 mOhm @ 8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Quantity per package: 5k pcs

Buy Now Datasheet
Singapore
P-Channel SMD -20V -8A MOSFET Transistor
278-FDME910PZT
P-Channel SMD -20V -8A MOSFET Transistor 278-FDME910PZT
P-Channel JFET, -20V, -8A, 24mR, Surface Mount Product overview: FDME910PZT from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -20V, -8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -20V, -8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDME910PZT can be used for catalog matching and distributor lookup.

P-Channel JFET, -20V, -8A, 24mR, Surface Mount Product overview: FDME910PZT from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -20V, -8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -20V, -8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDME910PZT can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FDME910PZT - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDME910PZT
Single FETs, MOSFETs FDME910PZT
MOSFET P-CH 20V 8A MICROFET

MOSFET P-CH 20V 8A MICROFET

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET P-CHAN -20V -8A 2.1W

MOSFET P-CHAN -20V -8A 2.1W

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDME910PZT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDME910PZT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDME910PZT
MOSFET P-CH 20V 8A MICROFET

MOSFET P-CH 20V 8A MICROFET

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDME910PZTTR-ND 016048-FDME910PZT 278-FDME910PZT FDME910PZT FDME910PZT FDME910PZT
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDME910PZT P-Channel SMD -20V -8A MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel; P-Channel
Package Type 6-PowerUFDFN SOT3; MicroFet 1.6x1.6 Thin 6-PowerUFDFN 21 nC @ 4.5 V
V(BR)DSS 20 volts 20 volts
PD 2100 milliwatts 700 milliwatts 2100 milliwatts
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