onsemi Single FETs, MOSFETs FDME910PZT

MOSFET P-CH 20V 8A MICROFET

P-Channel 20V 8A (Ta) 2.1W (Ta) Surface Mount MicroFet 1.6x1.6 Thin

P-Channel JFET, -20V, -8A, 24mR, Surface Mount Product overview: FDME910PZT from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -20V, -8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -20V, -8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDME910PZT can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016048-FDME910PZT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: MicroFet 1.6x1.6 Thin
Dimension: 6-PowerUFDFN
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 21nC @ 4.5V
Max Input Capacitance: 2110pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 24 mOhm @ 8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Quantity per package: 5k pcs