onsemi MOSFET FDMD8630

Description
MOSFET FET 30V 167A 1.0 mOhm
Description
MOSFET FET 30V 167A 1.0 mOhm
Datasheet
Datasheet Summary
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The FDMD8630 is a dual N-channel PowerTrench MOSFET in a 5 mm × 6 mm Power package, designed for synchronous rectification and common-ground load switch applications. It has a drain-to-source voltage rating of 30 V and a continuous drain current of 167 A at 25 °C. The maximum on-resistance is 1.0 mΩ at 10 V gate-source voltage and 38 A drain current. The device features a common-source configuration with a bottom source pad for improved thermal performance. Thermal resistance from junction to case is 2.9 °C/W. It is RoHS compliant and has a junction temperature range of -55 °C to +150 °C.

Datasheet Summary
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The FDMD8630 is a dual N-channel PowerTrench MOSFET in a 5 mm × 6 mm Power package, designed for synchronous rectification and common-ground load switch applications. It has a drain-to-source voltage rating of 30 V and a continuous drain current of 167 A at 25 °C. The maximum on-resistance is 1.0 mΩ at 10 V gate-source voltage and 38 A drain current. The device features a common-source configuration with a bottom source pad for improved thermal performance. Thermal resistance from junction to case is 2.9 °C/W. It is RoHS compliant and has a junction temperature range of -55 °C to +150 °C.

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Sheung Wan, Hong Kong
MOSFET
FDMD8630
MOSFET FDMD8630
MOSFET FET 30V 167A 1.0 mOhm

MOSFET FET 30V 167A 1.0 mOhm

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDMD8630
Product Name MOSFET
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