onsemi FET, MOSFET Arrays FDMD8530

Description
Mosfet Array 2 N-Channel (Dual) 30V 35A 2.2W Surface Mount Power56
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 30V 35A 2.2W Surface Mount Power56
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDMD8530TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDMD8530TR-ND
FET, MOSFET Arrays FDMD8530TR-ND
Mosfet Array 2 N-Channel (Dual) 30V 35A 2.2W Surface Mount Power56

Mosfet Array 2 N-Channel (Dual) 30V 35A 2.2W Surface Mount Power56

Buy Now Datasheet
FET, MOSFET Arrays - FDMD8530 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDMD8530
FET, MOSFET Arrays FDMD8530
MOSFET 2N-CH 30V 35A

MOSFET 2N-CH 30V 35A

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays - 1355619-FDMD8530 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
1355619-FDMD8530
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays 1355619-FDMD8530
Win Source Part Number: 1355619-FDMD8530 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) Mfr: onsemi Series: PowerTrench® Package: Tape & Reel Product Status: Obsolete Package / Case: 8-PowerWDFN Supplier Device Package: Power56 Base Product Number: FDMD85 Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A Rds On (Max) @ Id, Vgs: 1.25mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 149nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10395pF @ 15V Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99 Power - Max: 2.2W Configuration: 2 N-Channel (Dual)

Win Source Part Number: 1355619-FDMD8530
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Series: PowerTrench®
Package: Tape & Reel
Product Status: Obsolete
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56
Base Product Number: FDMD85
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10395pF @ 15V
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Power - Max: 2.2W
Configuration: 2 N-Channel (Dual)

Buy Now Datasheet
Mosfet, Dual N-Ch, 30V, 201A, Pqfn-8L; Transistor Polarity Onsemi - 84Y5828 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N-Ch, 30V, 201A, Pqfn-8L; Transistor Polarity Onsemi
84Y5828
Mosfet, Dual N-Ch, 30V, 201A, Pqfn-8L; Transistor Polarity Onsemi 84Y5828
MOSFET, DUAL N-CH, 30V, 201A, PQFN-8L; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:201A; Drain Source Voltage Vds:30V; On Resistance Rds(on):770µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; PowerRoHS Compliant: Yes

MOSFET, DUAL N-CH, 30V, 201A, PQFN-8L; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:201A; Drain Source Voltage Vds:30V; On Resistance Rds(on):770µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; PowerRoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMD8530 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMD8530
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMD8530
MOSFET 2N-CH 30V 35A POWER56

MOSFET 2N-CH 30V 35A POWER56

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDMD8530
MOSFET FDMD8530
MOSFET 30V Dual N-Channel PowerTrench MOSFET

MOSFET 30V Dual N-Channel PowerTrench MOSFET

Buy Now Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDMD8530TR-ND FDMD8530 1355619-FDMD8530 84Y5828 FDMD8530 FDMD8530
Product Name FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays Mosfet, Dual N-Ch, 30V, 201A, Pqfn-8L; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Package Type 8-PowerWDFN 8-PowerWDFN SOT3 TO-3
Polarity N-Channel; 2 N-Channel (Dual) N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts
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