Win Source Part Number: 1355619-FDMD8530
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Series: PowerTrench®
Package: Tape & Reel
Product Status: Obsolete
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56
Base Product Number: FDMD85
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10395pF @ 15V
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Power - Max: 2.2W
Configuration: 2 N-Channel (Dual)
Mosfet Array 2 N-Channel (Dual) 30V 35A 2.2W Surface Mount Power56
MOSFET 30V Dual N-Channel PowerTrench MOSFET
MOSFET, DUAL N-CH, 30V, 201A, PQFN-8L; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:201A; Drain Source Voltage Vds:30V; On Resistance Rds(on):770µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; PowerRoHS Compliant: Yes
MOSFET 2N-CH 30V 35A POWER56
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1355619-FDMD8530 | FDMD8530 | FDMD8530TR-ND | FDMD8530 | 84Y5828 | FDMD8530 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET | Mosfet, Dual N-Ch, 30V, 201A, Pqfn-8L; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3 | 8-PowerWDFN | 8-PowerWDFN | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
