Win Source Part Number: 1355619-FDMD8530
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Series: PowerTrench®
Package: Tape & Reel
Product Status: Obsolete
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56
Base Product Number: FDMD85
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10395pF @ 15V
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Power - Max: 2.2W
Configuration: 2 N-Channel (Dual)
MOSFETs 30V Dual N-Channel PowerTrench MOSFET Product overview: FDMD8530 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMD8530 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 30V 35A 2.2W Surface Mount Power56
MOSFET 2N-CH 30V 35A POWER56
MOSFET, DUAL N-CH, 30V, 201A, PQFN-8L; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:201A; Drain Source Voltage Vds:30V; On Resistance Rds(on):770µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; PowerRoHS Compliant: Yes
MOSFET 30V Dual N-Channel PowerTrench MOSFET
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1355619-FDMD8530 | 2088-FDMD8530 | FDMD8530 | FDMD8530TR-ND | FDMD8530 | 84Y5828 | FDMD8530 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays | N-Channel Dual 30V MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 30V, 201A, Pqfn-8L; Transistor Polarity Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3 | Reel | 8-PowerWDFN | 8-PowerWDFN | TO-3 | ||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.2590 kS |
