MOSFET 2N-CH 60V 8.2A 8POWER33
Mosfet Array 2 N-Channel (Dual) 60V 8.2A (Ta) 1.9W (Ta), 16W (Tc) Surface Mount 8-Power33 (3x3)
Mosfet Array 2 N-Channel (Dual) 60V 8.2A (Ta) 1.9W (Ta), 16W (Tc) Surface Mount 8-Power33 (3x3)
Mosfet Array 2 N-Channel (Dual) 60V 8.2A (Ta) 1.9W (Ta), 16W (Tc) Surface Mount 8-Power33 (3x3)
MOSFETs 60V Dual N-Channel Power Trench MOSFET Product overview: FDMC89521L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMC89521L can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038214-FDMC89521L
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Family Name: FDMC89521L
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-Power33 (3x3)
Maximum Power Dissipation: 800mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 8.2A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 1635pF @ 30V
Maximum Rds On at Id,Vgs: 17 mOhm @ 8.2A, 10V
ECCN: EAR99
Country of Origin: Thailand
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET 2N-CH 60V 8.2A 8PWR33
MOSFET 60V Dual N-Channel Power Trench MOSFET
MOSFET, DUAL N-CH, 60V, 8.2A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:8.2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMC89521L | FDMC89521LDKR-ND | 2088-FDMC89521L | 1038214-FDMC89521L | FDMC89521L | FDMC89521L | 99AC9170 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | N-Channel Dual 60V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC89521L | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Dual N-Ch, 60V, 8.2A, Power33; Transistor Polarity Onsemi |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| IDSS | 8200 milliamps | 8200 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
