onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8882 FDMC8882

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 118193-FDMC8882 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 18W (Tc) Family Name: FDMC8882 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MLP (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10.5A (Ta), 16A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 945pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14.3 mOhm @ 10.5A, 10V Alternative Parts (Cross-Reference): TSM180N03PQ33 RGG; STL10N3LLH5; RQ3E180BNTB; Introduction Date: May 06, 2009 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8882 - 118193-FDMC8882 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDMC8882 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FDMC8882FSDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDMC8882FSCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDMC8882FSTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMC8882 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Channel, 30V, 16A, Mlp 3.3X3.3; Channel Type Onsemi - 88T3285 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 118193-FDMC8882 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 18W (Tc) Family Name: FDMC8882 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MLP (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10.5A (Ta), 16A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 945pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14.3 mOhm @ 10.5A, 10V Alternative Parts (Cross-Reference): TSM180N03PQ33 RGG; STL10N3LLH5; RQ3E180BNTB; Introduction Date: May 06, 2009 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8882 - 118193-FDMC8882 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8882
118193-FDMC8882
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8882 118193-FDMC8882
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 118193-FDMC8882 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 18W (Tc) Family Name: FDMC8882 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MLP (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10.5A (Ta), 16A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 945pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14.3 mOhm @ 10.5A, 10V Alternative Parts (Cross-Reference): TSM180N03PQ33 RGG; STL10N3LLH5; RQ3E180BNTB; Introduction Date: May 06, 2009 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 118193-FDMC8882
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Family Name: FDMC8882
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10.5A (Ta), 16A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 945pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14.3 mOhm @ 10.5A, 10V
Alternative Parts (Cross-Reference): TSM180N03PQ33 RGG; STL10N3LLH5; RQ3E180BNTB;
Introduction Date: May 06, 2009
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDMC8882 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMC8882
Single FETs, MOSFETs FDMC8882
POWER FIELD-EFFECT TRANSISTOR, 1

POWER FIELD-EFFECT TRANSISTOR, 1

Supplier's Site Datasheet
Single FETs, MOSFETs - FDMC8882FSDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC8882FSDKR-ND
Single FETs, MOSFETs FDMC8882FSDKR-ND
N-Channel 30V 10.5A (Ta), 16A (Tc) 2.3W (Ta), 18W (Tc) Surface Mount 8-MLP (3.3x3.3)

N-Channel 30V 10.5A (Ta), 16A (Tc) 2.3W (Ta), 18W (Tc) Surface Mount 8-MLP (3.3x3.3)

Buy Now Datasheet
Single FETs, MOSFETs - FDMC8882FSCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC8882FSCT-ND
Single FETs, MOSFETs FDMC8882FSCT-ND
N-Channel 30V 10.5A (Ta), 16A (Tc) 2.3W (Ta), 18W (Tc) Surface Mount 8-MLP (3.3x3.3)

N-Channel 30V 10.5A (Ta), 16A (Tc) 2.3W (Ta), 18W (Tc) Surface Mount 8-MLP (3.3x3.3)

Buy Now Datasheet
Single FETs, MOSFETs - FDMC8882FSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC8882FSTR-ND
Single FETs, MOSFETs FDMC8882FSTR-ND
N-Channel 30V 10.5A (Ta), 16A (Tc) 2.3W (Ta), 18W (Tc) Surface Mount 8-MLP (3.3x3.3)

N-Channel 30V 10.5A (Ta), 16A (Tc) 2.3W (Ta), 18W (Tc) Surface Mount 8-MLP (3.3x3.3)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMC8882 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMC8882
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMC8882
MOSFET N-CH 30V 10.5A/16A 8MLP

MOSFET N-CH 30V 10.5A/16A 8MLP

Supplier's Site
Mosfet, N Channel, 30V, 16A, Mlp 3.3X3.3; Channel Type Onsemi - 88T3285 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 30V, 16A, Mlp 3.3X3.3; Channel Type Onsemi
88T3285
Mosfet, N Channel, 30V, 16A, Mlp 3.3X3.3; Channel Type Onsemi 88T3285
MOSFET, N CHANNEL, 30V, 16A, MLP 3.3X3.3; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.9V RoHS Compliant: Yes

MOSFET, N CHANNEL, 30V, 16A, MLP 3.3X3.3; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.9V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDMC8882
MOSFET FDMC8882
MOSFET 30V N-Channel Power Trench 174 MOSFET

MOSFET 30V N-Channel Power Trench 174 MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 118193-FDMC8882 FDMC8882 FDMC8882FSDKR-ND FDMC8882 88T3285 FDMC8882
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8882 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 30V, 16A, Mlp 3.3X3.3; Channel Type Onsemi MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 2300 to 18000 milliwatts 2300 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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