N-Channel 60V 18A (Ta), 56A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33
N-Channel 60V 18A (Ta), 56A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33
N-Channel 60V 18A (Ta), 56A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33
MOSFETs 60V N Chan Shielded Gate Power Trench Product overview: FDMC86570L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMC86570L can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 18A/56A POWER33
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 135331-FDMC86570L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power33
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 18A (Ta), 56A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 88nC @ 10V
Max Input Capacitance: 6705pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.3 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFET N-CH 60V 18A/56A POWER33
MOSFET, N-CH, 60V, 84A, POWER 33-8; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:84A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V; Power Dissipation:54W; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET 60V N Chan Shielded Gate Power Trench
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMC86570LDKR-ND | 2088-FDMC86570L | FDMC86570L | 135331-FDMC86570L | FDMC86570L | 46AC0787 | FDMC86570L |
| Product Name | Single FETs, MOSFETs | 60V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC86570L | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 84A, Power 33-8; Channel Type Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| Package Type | 8-PowerWDFN | Reel | 8-PowerWDFN | SOT3; Power33 | 8-PowerWDFN | TO-3 | |
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.0750 kS | ||||||
| PD | 54 milliwatts | 2300 milliwatts | 2300 to 54000 milliwatts | 54000 milliwatts |