P-Channel 150V 2.7A (Ta), 9A (Tc) 2.3W (Ta), 40W (Tc) Surface Mount 8-MLP (3.3x3.3)
P-Channel 150V 2.7A (Ta), 9A (Tc) 2.3W (Ta), 40W (Tc) Surface Mount 8-MLP (3.3x3.3)
P-Channel 150V 2.7A (Ta), 9A (Tc) 2.3W (Ta), 40W (Tc) Surface Mount 8-MLP (3.3x3.3)
MOSFETs -150 P-Channel Shielded Gate PowerTrench MOSFET Product overview: FDMC86261P from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMC86261P can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038208-FDMC86261P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3.3x3.3), Power33
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 2.7A (Ta), 9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 1360pF @ 75V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 160 mOhm @ 2.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFET P-CH 150V 2.7A/9A 8MLP
MOSFET, P-CH, -9A, -150V, WDFN; Transistor Polarity:P Channel; Continuous Drain Current Id:-9A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power RoHS Compliant: Yes
MOSFET PT5 150V/25V PchPower Trench Mosfet
MOSFET P-CH 150V 2.7A/9A 8MLP
MOSFET FET -150V 160.0 MOHM MLP3
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMC86261PCT-ND | 2088-FDMC86261P | 1038208-FDMC86261P | FDMC86261P | 07AH3919 | 598-FDMC86261P | FDMC86261P | FDMC86261P |
| Product Name | Single FETs, MOSFETs | P-Channel MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC86261P | Single FETs, MOSFETs | Mosfet, P-Ch, -9A, -150V, Wdfn; Transistor Polarity Onsemi | MOSFET PT5 150V/25V PchPower Trench Mosfet | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | ||||
| Package Type | 8-PowerWDFN | Reel | SOT3; 8-MLP (3.3x3.3), Power33 | 8-PowerWDFN | TO-3 | 8-PowerWDFN | ||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| PD | 40 milliwatts | 2300 to 40000 milliwatts | 2300 milliwatts | 2300 milliwatts | ||||
| Packing Method | Reel | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |