onsemi Single FETs, MOSFETs FDMC86183

Description
MOSFET N-CH 100V 47A 8PQFN
  • Single FETs, MOSFETs - FDMC86183 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • FETs - Single - FDMC86183 - 811771-FDMC86183 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDMC86183OSTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDMC86183OSCT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMC86183 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 47A, 100V, Pqfn; Transistor Polarity Onsemi - 07AH3917 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
MOSFET N-CH 100V 47A 8PQFN
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDMC86183 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMC86183
Single FETs, MOSFETs FDMC86183
MOSFET N-CH 100V 47A 8PQFN

MOSFET N-CH 100V 47A 8PQFN

Supplier's Site Datasheet
FETs - Single - FDMC86183 - 811771-FDMC86183 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FDMC86183
811771-FDMC86183
FETs - Single - FDMC86183 811771-FDMC86183
Manufacturer: ON Semiconductor Win Source Part Number: 811771-FDMC86183 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100V Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-PowerWDFN Power Dissipation (Maximum): 52W (Tc) Popularity: Low Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 12.8mOhm at 16A, 10V Gate Charge (Qg) (Maximum) at Vgs: 21nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 1515pF at 50V Current - Continuous Drain (Id) at 25°C: 47A (Tc) Vgs(th) (Maximum) at Id: 4V at 90μA Maximum Vgs: ±20V

Manufacturer: ON Semiconductor
Win Source Part Number: 811771-FDMC86183
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerWDFN
Power Dissipation (Maximum): 52W (Tc)
Popularity: Low
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 12.8mOhm at 16A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 21nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1515pF at 50V
Current - Continuous Drain (Id) at 25°C: 47A (Tc)
Vgs(th) (Maximum) at Id: 4V at 90μA
Maximum Vgs: ±20V

Buy Now
Single FETs, MOSFETs - FDMC86183OSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC86183OSTR-ND
Single FETs, MOSFETs FDMC86183OSTR-ND
N-Channel 100V 47A (Tc) 52W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33

N-Channel 100V 47A (Tc) 52W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33

Buy Now Datasheet
Single FETs, MOSFETs - FDMC86183OSCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC86183OSCT-ND
Single FETs, MOSFETs FDMC86183OSCT-ND
N-Channel 100V 47A (Tc) 52W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33

N-Channel 100V 47A (Tc) 52W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMC86183 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMC86183
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMC86183
MOSFET N-CH 100V 47A 8PQFN

MOSFET N-CH 100V 47A 8PQFN

Supplier's Site
Mosfet, N-Ch, 47A, 100V, Pqfn; Transistor Polarity Onsemi - 07AH3917 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 47A, 100V, Pqfn; Transistor Polarity Onsemi
07AH3917
Mosfet, N-Ch, 47A, 100V, Pqfn; Transistor Polarity Onsemi 07AH3917
MOSFET, N-CH, 47A, 100V, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power DissipationRoHS Compliant: Yes

MOSFET, N-CH, 47A, 100V, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power DissipationRoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDMC86183
MOSFET FDMC86183
MOSFET PTNG 100/20V Nch Trench Mosfet

MOSFET PTNG 100/20V Nch Trench Mosfet

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDMC86183 811771-FDMC86183 FDMC86183OSTR-ND FDMC86183 07AH3917 FDMC86183
Product Name Single FETs, MOSFETs FETs - Single - FDMC86183 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 47A, 100V, Pqfn; Transistor Polarity Onsemi MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts
IDSS 47000 milliamps 47000 milliamps
PD 52000 milliwatts 52000 milliwatts
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