Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038203-FDMC86160ET1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: Power33
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 9A (Ta), 43A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 1290pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFETs 100V N-Channel Power Trench MOSFET Product overview: FDMC86160ET100 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMC86160ET100 can be used for catalog matching and distributor lookup.
N-Channel 100V 9A (Ta), 43A (Tc) 2.8W (Ta), 65W (Tc) Surface Mount Power33
N-Channel 100V 9A (Ta), 43A (Tc) 2.8W (Ta), 65W (Tc) Surface Mount Power33
N-Channel 100V 9A (Ta), 43A (Tc) 2.8W (Ta), 65W (Tc) Surface Mount Power33
MOSFET N-CH 100V 9A/43A POWER33
MOSFET N-CH 100V 9A/43A POWER33
MOSFET FET 100V 14 MOHM PQFN33
MOSFET, N-CH, 43A, 100V, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0112ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.9V; Power RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1038203-FDMC86160ET100 | 2088-FDMC86160ET100 | FDMC86160ET100CT-ND | FDMC86160ET100 | FDMC86160ET100 | FDMC86160ET100 | 07AH3916 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC86160ET100 | N-Channel 100V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 43A, 100V, Pqfn; Transistor Polarity Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 100 volts | 100 volts | |||||
| PD | 2800 to 65000 milliwatts | 54 milliwatts | 2800 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | SOT3; Power33 | Reel | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN | TO-3 |
