Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038201-FDMC86102LZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power33
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 7A (Ta), 18A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 1290pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 6.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
Quantity per package: 3k pcs
N-Channel 100V 7A (Ta), 18A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3)
N-Channel 100V 7A (Ta), 18A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3)
N-Channel 100V 7A (Ta), 18A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3)
MOSFET N-CH 100V 7A/18A 8MLP
MOSFET N-CH 100V 7A/18A 8MLP
MOSFET 100V N-Channel PowerTrench MOSFET
MOSFET, N CHANNEL, 100V, 0.019OHM, 22A, MLP-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:22A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:41W RoHS Compliant: Yes
MOSFET, N-CH, 100V, 22A, POWER 33-8; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1038201-FDMC86102LZ | 8063507P | 8063507 | FDMC86102LZCT-ND | FDMC86102LZ | FDMC86102LZ | FDMC86102LZ | 54T8331 | 46AC0783 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC86102LZ | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Channel, 100V, 0.019Ohm, 22A, Mlp-8, Full Reel; Channel Type Onsemi | Mosfet, N-Ch, 100V, 22A, Power 33-8; Transistor Polarity Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 100 volts | 100 volts | |||||||
| PD | 2300 to 41000 milliwatts | 2300 milliwatts | 41000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||
| Package Type | SOT3; Power33 | WDFN | Power 33 | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN | TO-3 | TO-3 |
