onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8360L FDMC8360L

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 115738-FDMC8360L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power33 Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 27A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 5795pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.1 mOhm @ 27A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 115738-FDMC8360L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power33 Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 27A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 5795pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.1 mOhm @ 27A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8360L - 115738-FDMC8360L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8360L
115738-FDMC8360L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8360L 115738-FDMC8360L
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 115738-FDMC8360L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power33 Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 27A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 5795pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.1 mOhm @ 27A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 115738-FDMC8360L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power33
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 27A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 5795pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.1 mOhm @ 27A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDMC8360L - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMC8360L
Single FETs, MOSFETs FDMC8360L
MOSFET N-CH 40V 27A/80A POWER33

MOSFET N-CH 40V 27A/80A POWER33

Supplier's Site Datasheet
Single FETs, MOSFETs - FDMC8360LDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC8360LDKR-ND
Single FETs, MOSFETs FDMC8360LDKR-ND
N-Channel 40V 27A (Ta), 80A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33

N-Channel 40V 27A (Ta), 80A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33

Buy Now Datasheet
Single FETs, MOSFETs - FDMC8360LTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC8360LTR-ND
Single FETs, MOSFETs FDMC8360LTR-ND
N-Channel 40V 27A (Ta), 80A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33

N-Channel 40V 27A (Ta), 80A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33

Buy Now Datasheet
Single FETs, MOSFETs - FDMC8360LCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC8360LCT-ND
Single FETs, MOSFETs FDMC8360LCT-ND
N-Channel 40V 27A (Ta), 80A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33

N-Channel 40V 27A (Ta), 80A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33

Buy Now Datasheet
Mosfet, N-Ch, 40V, 80A, Power 33-8; Transistor Polarity Onsemi - 46AC0782 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 80A, Power 33-8; Transistor Polarity Onsemi
46AC0782
Mosfet, N-Ch, 40V, 80A, Power 33-8; Transistor Polarity Onsemi 46AC0782
MOSFET, N-CH, 40V, 80A, POWER 33-8; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes

MOSFET, N-CH, 40V, 80A, POWER 33-8; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 40V N Chan Shielded Gate Power Trench

MOSFET 40V N Chan Shielded Gate Power Trench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMC8360L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMC8360L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMC8360L
MOSFET N-CH 40V 27A/80A POWER33

MOSFET N-CH 40V 27A/80A POWER33

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 115738-FDMC8360L FDMC8360L FDMC8360LDKR-ND 46AC0782 FDMC8360L FDMC8360L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8360L Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 40V, 80A, Power 33-8; Transistor Polarity Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 40 volts 40 volts
PD 2300 to 54000 milliwatts 2300 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; Power33 8-PowerWDFN 8-PowerWDFN TO-3 8-PowerWDFN
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