MOSFET 2N-CH 30V 6A/8.5A 8MLP
Mosfet Array 2 N-Channel (Dual) 30V 6A, 8.5A 700mW, 1W Surface Mount 8-Power33 (3x3)
Mosfet Array 2 N-Channel (Dual) 30V 6A, 8.5A 700mW, 1W Surface Mount 8-Power33 (3x3)
Mosfet Array 2 N-Channel (Dual) 30V 6A, 8.5A 700mW, 1W Surface Mount 8-Power33 (3x3)
MOSFETs 30V Dual N-Channel PowerTrench MOSFET Product overview: FDMC8200S from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMC8200S can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1173814-FDMC8200S
Series: PowerTrench
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerWDFN
Mounting: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A
Power - Max: 700mW, 1W
Family Name: FDMC8200S
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: 8-Power33 (3x3)
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 660pF @ 15V
Rds On (Maximum) @ Id, Vgs: 20 mOhm @ 6A, 10V
Alternative Parts (Cross-Reference): BSZ0909ND; BSZ0909NDXTMA1; DMT3011LDT-7;
Introduction Date: December 17, 2010
ECCN: EAR99
Country of Origin: Taiwan, Thailand
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
DUAL N CHANNEL MOSFET, POWERTRENCH, 30V, 18A, POWER33, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18A; On Resistance Rds(on):0.016ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes
MOSFET 30V Dual N-Channel PowerTrench MOSFET
MOSFET 2N-CH 30V 6A/8.5A 8PWR33
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDMC8200S | FDMC8200STR-ND | 2088-FDMC8200S | 1173814-FDMC8200S | 54T8330 | FDMC8200S | FDMC8200S |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | N-Channel Dual 30V MOSFET Transistor | Electronic Surplus - FDMC8200S | Dual N Channel Mosfet, Powertrench, 30V, 18A, Power33, Full Reel; Transistor Polarity Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | ||||||
| IDSS | 6000 milliamps | 18000 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
