onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC7572S FDMC7572S

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038193-FDMC7572S Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 52W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power33 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 22.5A (Ta), 40A (Tc) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 44nC @ 10V Max Input Capacitance: 2705pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.15 mOhm @ 22.5A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC7572S - 1038193-FDMC7572S - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMC7572S - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Channel, 25V, 0.0025Ohm, 40A, Power 33-8; Channel Type Onsemi - 85W3144 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038193-FDMC7572S Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 52W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power33 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 22.5A (Ta), 40A (Tc) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 44nC @ 10V Max Input Capacitance: 2705pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.15 mOhm @ 22.5A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC7572S - 1038193-FDMC7572S - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC7572S
1038193-FDMC7572S
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC7572S 1038193-FDMC7572S
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038193-FDMC7572S Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 52W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power33 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 22.5A (Ta), 40A (Tc) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 44nC @ 10V Max Input Capacitance: 2705pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.15 mOhm @ 22.5A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038193-FDMC7572S
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.3W (Ta), 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power33
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 22.5A (Ta), 40A (Tc)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 44nC @ 10V
Max Input Capacitance: 2705pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.15 mOhm @ 22.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
SMD 25V 22.5A MOSFET Transistor
278-FDMC7572S
SMD 25V 22.5A MOSFET Transistor 278-FDMC7572S
N-CH Power MOSFET 25V 22.5A Si Surface Mount 8-Pin Product overview: FDMC7572S from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 25V, 22.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 25V, 22.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDMC7572S can be used for catalog matching and distributor lookup.

N-CH Power MOSFET 25V 22.5A Si Surface Mount 8-Pin Product overview: FDMC7572S from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 25V, 22.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 25V, 22.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDMC7572S can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDMC7572S
MOSFET FDMC7572S
MOSFET 25V 40A 3.2mOhm N-Ch PowerTrench SyncFET

MOSFET 25V 40A 3.2mOhm N-Ch PowerTrench SyncFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMC7572S - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMC7572S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMC7572S
MOSFET N-CH 25V 22.5A/40A PWR33

MOSFET N-CH 25V 22.5A/40A PWR33

Supplier's Site
Mosfet, N Channel, 25V, 0.0025Ohm, 40A, Power 33-8; Channel Type Onsemi - 85W3144 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 25V, 0.0025Ohm, 40A, Power 33-8; Channel Type Onsemi
85W3144
Mosfet, N Channel, 25V, 0.0025Ohm, 40A, Power 33-8; Channel Type Onsemi 85W3144
MOSFET, N CHANNEL, 25V, 0.0025OHM, 40A, POWER 33-8; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:52W RoHS Compliant: Yes

MOSFET, N CHANNEL, 25V, 0.0025OHM, 40A, POWER 33-8; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:52W RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1038193-FDMC7572S 278-FDMC7572S FDMC7572S FDMC7572S 85W3144
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC7572S SMD 25V 22.5A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 25V, 0.0025Ohm, 40A, Power 33-8; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 25 volts 25 volts
PD 2300 to 52000 milliwatts 2300 milliwatts 52000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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