P-Channel 30V 11.5A (Ta), 20A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3)
P-Channel 30V 11.5A (Ta), 20A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3)
P-Channel 30V 11.5A (Ta), 20A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3)
MOSFET P-Channel 30V 11.5A MLP8EP
MOSFETs -30V P-Channel Power Trench Product overview: FDMC6679AZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMC6679AZ can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016028-FDMC6679AZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Family Name: FDMC6679AZ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11.5A (Ta), 20A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 91nC @ 10V
Max Input Capacitance: 3970pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 10 mOhm @ 11.5A, 10V
Alternative Parts (Cross-Reference): AP6683GYT-HF; DMP3017SFG-13; DMP3017SFG-7; RQ3E120ATTB;
Introduction Date: July 28, 2006
ECCN: EAR99
Country of Origin: Malaysia, Philippines, Thailand
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET P-CH 30V 11.5A/20A 8MLP
MOSFET P-CH 30V 11.5A/20A 8MLP
MOSFET, P CHANNEL, 30V, 20A, MLP 3.3X3.3; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes
30V 10mΩ@11.5A,10V 3V@250uA P Channel WDFN-8(3.3x3.3) MOSFETs ROHS
MOSFET -30V P-Channel Power Trench
| DigiKey | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMC6679AZFSTR-ND | 7599522 | 7599522P | 2088-FDMC6679AZ | 016028-FDMC6679AZ | FDMC6679AZ | FDMC6679AZ | 88T3264 | FDMC6679AZ | FDMC6679AZ |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | P-Channel -30V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC6679AZ | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Channel, 30V, 20A, Mlp 3.3X3.3; Channel Type Onsemi | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| Package Type | 8-PowerWDFN | Mlp | MLP8 | Reel | SOT3; 8-MLP (3.3x3.3) | 8-PowerWDFN | 8-PowerWDFN | TO-3 | ||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||
| Number of units in IC | 1 | |||||||||
| Transconductance | 0.0460 kS |
